Design of a test chip with small embedded temperature sensor structures realized in a common-drain power trench technology

Köck, Helmut; Illing, Robert; Ostermann, Thomas; Decker, S.; Dibra, Donald; Pobegen, Gregor; Filippis, Stefano de; Glavanovics, Michael; Pogány, D.

doi:10.1109/icmts.2011.5976842

Cited by 3 publications

(3 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2. The base-emitter voltage [5] depends on the temperature under a biased constant current, and the change of V BE under this biased constant current can be measured as follows:…”

Section: Temperature Sensormentioning

confidence: 99%

“…The doping concentrations of the P and N pillars in an SJ TMOSFET are denoted by N A and N D , respectively. The relationship between the doping concentrations and widths of the pillars is as follows: In this paper, a bipolar diode structure is used as a temperature sensor because of the linear dependency of its diode voltage on temperature [4]- [5]. A temperature-dependent model with self-heating characteristics has been implemented and will be described in the next section.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electrothermal Analysis for Super-Junction TMOSFET with Temperature Sensor

Lho¹,

Yang²

2015

ETRI J

View full text Add to dashboard Cite

For a conventional power metal–oxide–semiconductor field‐effect transistor (MOSFET), there is a trade‐off between specific on‐state resistance and breakdown voltage. To overcome this trade‐off, a super‐junction trench MOSFET (TMOSFET) structure is suggested; within this structure, the ability to sense the temperature distribution of the TMOSFET is very important since heat is generated in the junction area, thus affecting its reliability. Generally, there are two types of temperature‐sensing structures — diode and resistive. In this paper, a diode‐type temperature‐sensing structure for a TMOSFET is designed for a brushless direct current motor with on‐resistance of 96 mΩ·mm2. The temperature distribution for an ultra‐low on‐resistance power MOSFET has been analyzed for various bonding schemes. The multi‐bonding and stripe bonding cases show a maximum temperature that is lower than that for the single‐bonding case. It is shown that the metal resistance at the source area is non‐negligible and should therefore be considered depending on the application for current driving capability.

show abstract

“…2. The base-emitter voltage [5] depends on the temperature under a biased constant current, and the change of V BE under this biased constant current can be measured as follows:…”

Section: Temperature Sensormentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electrothermal Analysis for Super-Junction TMOSFET with Temperature Sensor

Lho¹,

Yang²

2015

ETRI J

View full text Add to dashboard Cite

show abstract

“…In the SJ TMOSFET, the breakdown voltage is proportional to the length of the drift region of   as shown in Eq. (2).…”

Section: Introductionmentioning

confidence: 99%

A Study on Temperature Dependent Super-junction Power TMOSFET

Lho¹

2016

Journal of IKEEE

View full text Add to dashboard Cite

It is important to operate the driving circuit under the optimal condition through precisely sensing the power consumption causing the temperature made mainly by the MOSFET (metal-oxide semiconductor field-effect transistor) when a BLDC (Brushless Direct Current) motor operates. In this letter, a Super-junction (SJ) power TMOSFET (trench metal-oxide semiconductor field-effect transistor) with an ultra-low specific on-resistance of 0.96 mΩ·  under the same break down voltage of 100 V is designed by using of the SILVACO TCAD 2D device simulator, Atlas, while the specific on-resistance of the traditional power MOSFET has tens of mΩ·  , which makes the higher power consumption. The SPICE simulation for measuring the power distribution of 25 cells for a chip is carried out, in which a unit cell is a SJ Power TMOSFET with resistor arrays. In addition, the power consumption for each unit cell of SJ Power TMOSFET, considering the number, pattern and position of bonding, is computed and the power distribution for an ANSYS model is obtained, and the SJ Power TMOSFET is designed to make the power of the chip distributed uniformly to guarantee it's reliability.

show abstract

Design of Super-junction TMOSFET with Embedded Temperature Sensor

Lho

2015

Journal of IKEEE

View full text Add to dashboard Cite

Super-junction trench MOSFET (SJ TMOSFET) devices are well known for lower specific on-resistance and high breakdown voltage (BV). For a conventional power MOSFET (metal-oxide semiconductor field-effect transistor) such as trench double-diffused MOSFET (TDMOSFET), there is a tradeoff relationship between specific on-state resistance and breakdown voltage. In order to overcome the tradeoff relationship, a SJ TMOSFET structure is suggested, but sensing the temperature distribution of TMOSFET is very important in the application since heat is generated in the junction area affecting TMOSFET. In this paper, analyzing the temperature characteristics for different number bonding for SJ TMOSFET with an embedded temperature sensor is carried out after designing the diode temperature sensor at the surface of SJ TMOSFET for the class of 100 V and 100 A for a BLDC motor.

show abstract

Design of a test chip with small embedded temperature sensor structures realized in a common-drain power trench technology

Cited by 3 publications

References 12 publications

Electrothermal Analysis for Super-Junction TMOSFET with Temperature Sensor

Electrothermal Analysis for Super-Junction TMOSFET with Temperature Sensor

A Study on Temperature Dependent Super-junction Power TMOSFET

Design of Super-junction TMOSFET with Embedded Temperature Sensor

Contact Info

Product

Resources

About