Design of a Substrate Integrated Waveguide (SIW) Filter Using a Novel Topology of Coupling

Abstract

International audienceWe report on a new topology of coupling between substrate integrated circular cavities designed to produce particular filtering functions through combination with the classical iris-based coupling. This coupling is achieved by a grounded coplanar line etched at the top of cavities. This topology was used to realize a Ku-Band third-order filter, whose synthesis, electromagnetic simulation with HFSS, and experimental performances are presented here

Second-Order Mixed Coupling Filter With One Controllable Transmission Zero Using Multilayer Substrate Integrated Waveguide

“…For the circular SIW resonator, the electric field is vertically polarized, and the magnetic field is circular within the cavity [13]. The fundamental mode is TM 010 mode, and the resonant frequency f 01 can be calculated by:…”

Substrate Integrated Waveguide Filter With Improved Stopband Performance Using LTCC Technology

“…TE 201 -mode in folded-SIW cavity is taken as a resonator for passband implement. Therefore, the signs of coupling coefficients M 13 and M 23 are different. Figure 5(b) plots the magnetic coupling coefficients versus pc 1 .…”

“…In order to move TZ to the lower stopband, TE 201 -mode in SIW cavity is used to filter design [12], and then, larger sizes are inevitable. To get a negative cross-coupling in trisection topology, coplanar waveguide (CPW) structure is etched on the top metal layer of the SIW cavities [13,14]. Nonphysical couplings implemented by higher or lower modes in waveguides are used to generate the finite TZs far away from the passband for improved stopband performance [15].…”

Vertical Transition in Multilayer Millimeter Wave Module Using Circular Cavity

“…The distance between centre line of the aperture and circle centre d; the length of the stub l (calculated from centre line of the aperture); /4), h 0 = 2 mm, w 0 = 0.2 mm, R 0 = 1.6 mm, the transition structure was modeled with solid wall firstly and then the solid wall was replaced by vias-array under the guidelines of references [8][9][10][11], Some applications of SICC can be found in references [12][13][14], some important design guidelines can be found in [15][16][17][18][19]. The radius of the cavity R and the gap location d were two key parameters in designing of the transition structure; the R can be calculated with (3), and the parameter d was approximately λ g /4 ; the width of the microstrip lines were calculated to guarantee a 50 Ω impedance.…”