Design of a low VSWR harmonics, low loss SP6T switch for GSM/Edge applications.

Prikhodko, D.; Tkachenko, Y.A.; Sprinkle, S.; Carter, R.; Nabokin, S.; Chiesa, J.

doi:10.1109/emicc.2007.4412640

Search citation statements

Order By: Relevance

Paper Sections

Select...

Technology Challenges1

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2007

2013

Publication Types

Select...

Other4

Article2

Relationship

Self Cite0

Independent6

Authors

Journals

Cited by 7 publications

(2 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These technologies include GaAs and SiGe HBT's (for power amplifiers [2] , GaAs PHEMTs and CMOS SOI/SOS, for switches [3] , and SAW/BAW filters [4], which are all integrated into front-end modules (FEMs) with a high degree of sophistication. In addition, emerging technologies that hold considerable promise for FEMs include MEMS switches [5] and high linearity varactors [6].…”

Section: Technology Challengesmentioning

confidence: 99%

4<sup>th</sup> generation wireless transceiver design

Larson

Asbeck

Kimball

2010

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

View full text Add to dashboard Cite

show abstract

Section: Technology Challengesmentioning

confidence: 99%

4<sup>th</sup> generation wireless transceiver design

Larson

Asbeck

Kimball

2010

2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)

View full text Add to dashboard Cite

show abstract

“…Due to advantages of high electron mobility, high breakdown voltage and low conductivity substrate, GaAs-based pseudo-morphic high electron mobility transistor (p-HEMT) is a preferred choice to realize monolithic microwave integrated circuits (MMICs), especially for high power handling capability applications, as power amplifiers (PAs) (1)- (10) and switches (11)- (15). In practical PA designs, transistors are commonly biased at a high supply voltage to acquire high output power and good power efficiency.…”

Section: Introductionmentioning

confidence: 99%

The Reliability Study and Device Modeling for p-HEMT Microwave Power Transistors

Liu¹,

Chang

et al. 2011

ECS Trans.

View full text Add to dashboard Cite

In this paper, the commercial 0.5-μm AlGaAs/InGaAs/GaAs pseudo-morphic high electron mobility transistors were subjected to both high-drain voltage and high-temperature stresses for investigating reliability issues. The results reveal that the stressinduced trapping phenomena near two-dimensional electron gas layer should be responsible for the different drain current collapses. The decay level of the DC and the small-signal characteristics increases with the stress voltage and/or the operation temperature. The self-consistent model was established through the deembedded and the non-linear fitting processes, which can be used to estimate the DC and RF small-signal characteristics degradation under high-drain voltage and high-temperature stress.

show abstract

Accurate HEMT Switch Large-Signal Device Model Derived from Pulsed-Bias Capacitance and Current Characteristics

Takatani¹,

Chen²

2009

2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium

View full text Add to dashboard Cite

Design of a low VSWR harmonics, low loss SP6T switch for GSM/Edge applications.

Cited by 7 publications

References 7 publications

4<sup>th</sup> generation wireless transceiver design

4<sup>th</sup> generation wireless transceiver design

The Reliability Study and Device Modeling for p-HEMT Microwave Power Transistors

Accurate HEMT Switch Large-Signal Device Model Derived from Pulsed-Bias Capacitance and Current Characteristics

Contact Info

Product

Resources

About