Design of a low-power low-phase noise MEMS compatible S-band oscillator in 130 nm CMOS technology

Bhattacharya, Anirban; Bhattacharyya, Tarun Kanti

doi:10.1109/indcon.2010.5712587

Cited by 2 publications

(2 citation statements)

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“…The VCO core consists of two complimentary cross-coupled differential transistor pairs: and using nMOS and and using pMOS. Using such a connection, negative transconductances of both cross-coupled pairs add up; thereby compensating loss of the tank circuit by burning lesser current, and thus reducing power consumption [34]. While nMOS transistors have a smaller size than pMOS transistors to achieve the same for a given current, pMOS transistors have a lower hot carrier induced white noise [35], and thus offer better PN performance.…”

Section: B Rf Analysismentioning

confidence: 99%

“…At the same time, the widths were not kept too high such that high parasitic capacitances from these transistors, adding up in parallel to the main tank circuit, alter frequency of oscillation . Also, transconductances of both nMOS and pMOS transistors were matched to arrest noise up-conversion and maintain symmetry of output waveforms [34]. At the same time, tail transistors and of the current mirror were made of pMOS for better noise performance.…”

Section: B Rf Analysismentioning

confidence: 99%

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A 1.3–2.4-GHz 3.1-mW VCO Using Electro-Thermo- Mechanically Tunable Self-Assembled MEMS Inductor on HR Substrate

Bhattacharya

Mandal

Bhattacharyya

2015

IEEE Trans. Microwave Theory Techn.

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This paper reports implementation and wafer-level testing of a self-assembled tunable microelectromechanical systems (MEMS) inductor with electrostatic, electrothermal, and thermal tuning capability. The surface micromachined inductor was fabricated on a high-resistivity (HR) substrate ( k cm) using a doped polysilicon and Au-Cr metal combination as a bimorph structural layer for providing self-assembled elevation with an enhanced factor. Extensive electro-thermo-mechanical and RF characterization was carried out for the inductor, the latter over a temperature range from 30 C to 150 C. Furthermore, the tunable inductor was integrated in the tank circuit of a CMOS oscillator and wafer-level MEMS-CMOS voltage-controlled oscillator testing revealed a best figure-of-merit of 197.6 dB with a frequency tuning range of 1.3-2.4 GHz with a power consumption of 3.07 mW.Index Terms-Bond wire, high-resistivity (HR) substrate, microelectromechanical systems (MEMS) inductor, quality factor, selfassembly, voltage-controlled oscillator (VCO).

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Section: B Rf Analysismentioning

confidence: 99%

Section: B Rf Analysismentioning

confidence: 99%