Design of a low noise 190–240 GHz subharmonic mixer based on 3D geometric modeling of Schottky diodes and CAD load-pull techniques

Chen, Zhe; Zhang, Chao; Yang, Fan; Yuan, Ye

doi:10.1587/elex.13.20160604

Cited by 13 publications

(12 citation statements)

References 18 publications

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“…Standard diode models provided in Keysight's ADS are employed to present the nonlinear behaviors of the designed Schottky diodes by the use of the proposed parameters. The circuitry design process is based on the methodology explained in [14]. The EM calculation results are exported to ADS as Touchstone files containing S-parameter information of the embedding network, which is combined with the diode models to simulate the whole circuit performance (as schematically shown in Fig.…”

Section: Circuitry Designmentioning

confidence: 99%

“…A modeling approach of Schottky diodes is proposed to characterize the effects of diode parameters on the power handling issue. The approach incorporating computeraided design (CAD) load-pull techniques makes full use of simulation features offered in the CAD software [14], which provides an effective diode parameter design strategy for frequency doublers. Based on the analysis through the proposed model, a 6-anode discrete diode chip is designed for this work to handle the high power input.…”

Section: Introductionmentioning

confidence: 99%

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190 GHz high power input frequency doubler based on Schottky diodes and AlN substrate

Chen

Wang

Alderman

et al. 2016

IEICE Electron. Express

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This paper presents the design and development of a 190 GHz Schottky-diode frequency doubler (×2 multiplier) which can handle up to 260 mW input power. In order to increase the power handling capability, a modeling approach incorporating computer-aided design (CAD) load-pull techniques to characterize the diode performance is proposed. By the use of this approach, effects of several critical diode parameters on the power handling issue are quantitatively investigated and based on the analysis, a discrete diode chip is designed for the doubler. To ensure rapid heat sink in the doubler circuitry, low cost aluminum nitride ceramic (AlN) is selected as the dielectric material of the circuit substrate, which has significantly better thermal conductivity compared with currently widely-used fused quartz. The doubler circuitry is based on a balanced configuration, which brings a merit of avoiding the use of a filter for the input and output signal isolation. The doubler circuit is optimized by co-simulation using ANSYS's HFSS and Keysight's ADS. The measurements show that the doubler can handle up to 260 mW input power with a power conversion efficiency of nearly 8%, resulting in 20 mW output power at 193 GHz.

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Section: Circuitry Designmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

190 GHz high power input frequency doubler based on Schottky diodes and AlN substrate

Chen

Wang

Alderman

et al. 2016

IEICE Electron. Express

Self Cite

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“…Wideband receivers require wideband mixers and multipliers. In the past few decades, submillimeter wave and terahertz mixers and multipliers based on Schottky diodes developed rapidly due to accurate modeling and fabricating techniques . THz receivers usually use cascade connection of the independent mixers and triplers.…”

Section: Introductionmentioning

confidence: 99%

220 GHz wideband integrated receiver front end based on planar Schottky diodes

Yang

Zhang

Zhao

et al. 2020

Micro & Optical Tech Letters

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In this article, a 220 GHz wideband receiver front end is proposed, featuring a 220 GHz subharmonic mixer and a 110 GHz wideband tripler integrated in one single block. The 220 GHz subharmonic mixer and 110 GHz tripler are firstly developed separately with proper planar Schottky diodes. According to the simulated and experimental results, the direct combination of independent mixer and tripler will lead to deterioration of the front end's performances, especially for wideband receivers. This indicates the necessity of building matching network between the cascade circuits in wideband submillimeter receivers. To improve the integral performances of the receiver front end and reduce its size, the combination of the subharmonic mixer and the tripler was optimized with load‐pull techniques and realized in one block. Measured results reveal that the single sideband (SSB) conversion loss of the integrated receiver front end is 7.5‐11 dB from 185 to 250 GHz, while the double sideband (DSB) noise temperature is 750‐1600 K within this frequency range. The integrated front end features half size of the combination of independent modules and better performances. Good agreement between the simulated and measured results shows that the integration and optimization techniques can be applied to realize compact terahertz systems in the future.

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“…Those mixers achieve a low conversion loss, which is comparable with the conversion loss of fundamental mixers. Methods of enlarging the working bandwidth of the sub-harmonic mixers is reported in [6,7,8].…”

Section: Introductionmentioning

confidence: 99%

Wideband sub-harmonic mixer incorporating short-circuited band-pass filter

Cui

Chen

et al. 2017

IEICE Electron. Express

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A Q band sub-harmonic mixer with wideband radio frequency (RF) and high intermediate frequency (IF) is proposed. The mixer employs a short-circuited band-pass filter (BPF) and a RF-IF diplexer, which provide proper terminations for the IF, RF, and local-oscillator (LO) signals simultaneously, and reject the major unwanted mixing products. A Q-band subharmonic mixer is designed and fabricated. The measured results show that the proposed sub-harmonic mixer can operate from 40 to 50 GHz for RF and support up to 10 GHz for IF bandwidth. As a down-conversion mixer, the measured conversion-loss is less than than 10.5 dB over the available RF band, while the minimum conversion-loss is about 6.8 dB at an RF of 45 GHz and IF of 5 GHz. As an up-conversion mixer, the measured conversion-loss is less than 11 dB over the available IF band, while the minimum conversion-loss is about 7.5 dB at an RF of 45.5 GHz and IF of 5.5 GHz.

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Design of a low noise 190–240 GHz subharmonic mixer based on 3D geometric modeling of Schottky diodes and CAD load-pull techniques

Cited by 13 publications

References 18 publications

190 GHz high power input frequency doubler based on Schottky diodes and AlN substrate

190 GHz high power input frequency doubler based on Schottky diodes and AlN substrate

220 GHz wideband integrated receiver front end based on planar Schottky diodes

Wideband sub-harmonic mixer incorporating short-circuited band-pass filter

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