“…Depending on the relative magnetization orientation of these two FM layers, i.e., parallel (P) or anti-parallel (AP), each MTJ device can exhibit two stable resistance states, i.e., R P or R AP , which are used to represent binary logic information '0 and '1 , respectively, as shown in Figure 1b. Using the MTJs as the non-volatile storage elements, several non-volatile logic circuits, such as magnetic flip-flop [7][8][9], magnetic look-up table [10][11][12], magnetic full-adder [13][14][15] and ternary content-addressable memory [16][17][18], have been proposed.…”