Design of a fully integrated concurrent triple-band CMOS low noise amplifier

Jou, Christina F.; Cheng, Kuo-Sheng; Lu, E.; Wang, Yang

doi:10.1109/mwscas.2003.1562519

Cited by 11 publications

(6 citation statements)

References 3 publications

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“…Noise figures measured using an Agilent E4407B noise figure meter are compared with those of the simulation in Figure 10. The measured noise figures agree well with those of simulation for the LTE band but show Table 3 and compared with those of recently published studies [9,10]. As shown in Table 3, power consumption of the LNA suggested in this study is quite low compared with the other works.…”

Section: Measurementsupporting

confidence: 89%

A concurrent triple‐band CMOS low noise amplifier for fourth generation applications

Jang

Choi

2010

Micro & Optical Tech Letters

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In this study, a concurrent triple-band low noise amplifier (LNA) is designed for long term evolution (LTE), Mobile-WiMAX (MWiMAX), and WiMAX services. The main topology of the proposed LNA is a cascode architecture with source degeneration using shunt resistive feedback topology for the triple-resonance characteristic. The LNA is designed using a Taiwan Semiconduction Company (TSMC) 0.18 lm radio frequency CMOS process. To obtain the necessary gains over the operating frequency bands, a series LC branch is added in parallel with an inductor at the drain load of a single band LNA. The peak gains at LTE, M-WiMAX, and WiMAX bands are 17.6, 14.7, and 14.5 dB, respectively, whereas dissipating 8 mA from a 1.4 V supply voltage. The average noise figure over the three operating frequency bands is 4.5 dB.

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Section: Measurementsupporting

confidence: 89%

A concurrent triple‐band CMOS low noise amplifier for fourth generation applications

Jang

Choi

2010

Micro & Optical Tech Letters

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“…The proposed LNA drains 7 mA from a 1.5‐V supply voltage. Table gives a summary of the results of this work and the recently published CMOS and SiGe BiCMOS LNAs . As can be seen, this work performs pretty well.…”

Section: Measurementmentioning

confidence: 64%

A concurrent multiband CMOS low-noise amplifier for 4G standard receivers

Jung

Choi

2014

Microw. Opt. Technol. Lett.

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In this article, a concurrent triple‐band low‐noise amplifier (LNA), which operates at 698–800, 1920–2170, and 2300–2400 MHz, is designed for long‐term evolution, WCDMA/HSDPA, and Wibro services. The circuit is designed with TSMC 0.18‐μm RF CMOS technology. The main topology of the proposed LNA is the cascade architecture with source degeneration. To obtain the necessary gains for this frequency bands, a series LC circuit is added in parallel with the parallel LC tank of a single‐band LNA. The proposed LNA is especially suitable for use in multistandard wireless receiver front‐ends as it saves die area and reduces power consumption by replacing parallel LNAs for each channel frequency. The proposed LNA has voltage gains of 14.6, 15.2, and 15.5 dB at 749, 1920, and 2300 MHz, respectively, while dissipating 7 mA from a 1.5‐V supply voltage. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:834–838, 2014

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“…Similar to the single-band LNA [2], being the first active element of the receiver chain, the noise figure (NF) of a dual-band LNA [7] also plays a significant role in the overall NF of the dualband receiver. Before explaining the design details of concurrent triple-band LNA, it is helpful to review some basic design guidance and concurrent dual-band LNA architecture.…”

Section: 1a Review Of Dual Band Lnamentioning

confidence: 99%

“…The inductive feedback moves the source impedance for optimum NF toward the optimum power match with a minor increase in the minimum NF. Cascade configuration can be used to enhance stability, reverse isolation of the amplifier and reduce Miller effect [2][3][4][5].…”

Section: 1a Review Of Dual Band Lnamentioning

confidence: 99%

“…Wireless telephony uses different frequency bands (900 MHz, 1800 MHz, 1900 MHz, 2200MHz …), hence most mobile phones on the market nowadays offer to cover these bands with tri-band or quad-band mobile phones, which requires the multiplication of channels of receive and transmit radio frequency to treat each of these frequencies. This increases costs and causes usability issues since you need more space to perform the multitude of channels [2][3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

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A Novel and Single Chip Tri-Band Low-Noise Amplifier for Wlan, Wifi and Wimax Receivers

Akhchaf¹

2012

IJCSIT

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In first stage of each microwave receiver there is Low Noise Amplifier (LNA) circuit, and this stage has important rule in quality factor of the receiver. The design of a LNA in Radio Frequency (RF) circuit requires the trade-off many importance characteristics such as gain, Noise Figure (NF), stability, power consumption and complexity. This situation forces designers to make choices in the design of RF circuits. In this paper the aim is to design and simulate a novel and single Chip consists of a tri-band low noise amplifier (LNA) operating simultaneously at three frequency bands 1.9 GHz, 2.4 GHz and 5 GHz for WLAN, WiFi and WiMax receivers, is designed and presented in this paper. It can be used in many applications of wireless communication (GSM, Zigbee, Bluetooth, Wi-Fi, HiperLAN, UWB, etc ...) for 3G and 4G networks. The proposed circuit is based on two amplifiers, dual-band and simple band, with transistor GaAs FET type ATF 10136 that has a better performance, successful integration of feasibility and a low price compared with other technologies. Simulations of the operation of the amplifier were performed with the software Agilent Advanced Design System (ADS) and Ansoft software and performance of the amplifier were recorded and analyzed. A single stage LNA has successfully been designed with 29.3dB, 24.56dB and 11.93dB with noise figure of 0.44dB, 0.49dB and 4.42dB respectively at three frequency bands 1.9 GHz, 2.5 GHz and 5 GHz.

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Design of a fully integrated concurrent triple-band CMOS low noise amplifier

Cited by 11 publications

References 3 publications

A concurrent triple‐band CMOS low noise amplifier for fourth generation applications

A concurrent triple‐band CMOS low noise amplifier for fourth generation applications

A concurrent multiband CMOS low-noise amplifier for 4G standard receivers

A Novel and Single Chip Tri-Band Low-Noise Amplifier for Wlan, Wifi and Wimax Receivers

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