A concurrent triple‐band CMOS low noise amplifier for fourth generation applications

Abstract

In this study, a concurrent triple-band low noise amplifier (LNA) is designed for long term evolution (LTE), Mobile-WiMAX (MWiMAX), and WiMAX services. The main topology of the proposed LNA is a cascode architecture with source degeneration using shunt resistive feedback topology for the triple-resonance characteristic. The LNA is designed using a Taiwan Semiconduction Company (TSMC) 0.18 lm radio frequency CMOS process. To obtain the necessary gains over the operating frequency bands, a series LC branch is added in parallel with an inductor at the drain load of a single band LNA. The peak gains at LTE, M-WiMAX, and WiMAX bands are 17.6, 14.7, and 14.5 dB, respectively, whereas dissipating 8 mA from a 1.4 V supply voltage. The average noise figure over the three operating frequency bands is 4.5 dB.

A concurrent multiband CMOS low-noise amplifier for 4G standard receivers

“…The proposed LNA drains 7 mA from a 1.5‐V supply voltage. Table gives a summary of the results of this work and the recently published CMOS and SiGe BiCMOS LNAs . As can be seen, this work performs pretty well.…”