Design of a D-Band CMOS Amplifier Utilizing Coupled Slow-Wave Coplanar Waveguides

Parveg, Dristy; Varonen, Mikko; Karaca, Denizhan; Vahdati, Ali; Kantanen, Mikko; Halonen, K.

doi:10.1109/tmtt.2017.2777976

Cited by 52 publications

(26 citation statements)

References 40 publications

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“…Transformer-based impedance matching is also feasible [105][106][107]. Furthermore, CPW [108][109][110] is easy to simulate and its measurement results are close to simulation results. However, CPW takes up more chip area.…”

Section: Comparison and Summarymentioning

confidence: 64%

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Cmos Low Noise Amplifier Design for Microwave and Mmwave Applications (Invited Review)

Li¹,

Zhang²

2018

PIER

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This paper reviews recent advances in the design of low noise amplifier (LNA) in complementary metal oxide semiconductor (CMOS) technology for radio transceivers at microwave and millimeter wave (mmWave) frequencies. First, the evolution of wireless communication systems and CMOS technology are briefly revisited to highlight the requirements of an LNA design. Then, key performance parameters and device circuit models are described. Next, we discuss typical LNA topologies, followed by those important design techniques, algorithms and concepts developed specifically for CMOS LNAs. Moreover, reported CMOS LNA designs are summarized, and future design issues are identified. Finally, we conclude the paper and briefly outline our future work on CMOS LNA designs.

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Section: Comparison and Summarymentioning

confidence: 64%

“…Finally, we may even use other process technologies to enhance the design, such as Round Table Layout [8], above-IC technology [86] and FD-SOI [110]. For example, Siligaris et al presented a twostage cascode LNA design using SOI CMOS technology [121].…”

Section: Comparison and Summarymentioning

confidence: 99%

Cmos Low Noise Amplifier Design for Microwave and Mmwave Applications (Invited Review)

Li¹,

Zhang²

2018

PIER

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“…A CS-CPW is an efficient way of implementing a coupled line in silicon technology [3] [4]. The CS-CPW consists of two signal lines, side-ground lines in both sides of the signal lines which serve as the well-defined ground return current paths for the even-mode signal propagation, and gridded metal shields under the signal and ground lines.…”

Section: Design Of a Coupler Using The Cs-cpwmentioning

confidence: 99%

“…Modeling of the CS-CPW structure by computer simulations is computationally heavy and time-consuming. Therefore, an efficient modeling methodology is proposed in [4] and successfully verified in [3]. The modeling approach divides the electromagnetic (EM) simulations of the CS-CPW structure into four parts, at first, it divides into odd-and evenmode analysis, and each mode is further decoupled into oddand even-mode R & L and C & G analysis.…”

Section: Design Of a Coupler Using The Cs-cpwmentioning

confidence: 99%

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Wideband mm-Wave CMOS Slow Wave Coupler

Parveg

Varonen

Karaca

et al. 2019

IEEE Microw. Wireless Compon. Lett.

Self Cite

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In this paper, we have presented a design of onchip millimeter-wave 3-dB quadrature coupler that utilizes the coupled slow-wave coplanar waveguide (CS-CPW). The designed CMOS coupler covers the whole E-and W-band and occupies a silicon area of only 0.0115 mm 2 which is significantly smaller compared to the conventional microstrip-line-based Lange couplers. Measurement of the quadrature coupler shows a -3.5 dB through and a -4.4 dB coupling at 90 GHz. A less than ±1-dB amplitude and a ±4 • phase errors from 55 to 110 GHz are recorded.

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A 90‐ to 115‐GHz superheterodyne receiver front‐end for W‐band imaging system in 28‐nm complementary metal‐oxide‐semiconductor

Wei

Zhang

et al. 2022

Circuit Theory & Apps

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In this paper, a broadband superheterodyne receiver (RX) front-end for millimeter-wave (mm-Wave) imaging radar is presented. Realized in 28-nm CMOS technology, the proposed RX incorporates a wideband low-noise amplifier (LNA), double-balanced passive mixers for the dual down-conversion, a differential power divider, a differential intermediate frequency filters, a current-mode-logic divider-by-2, and a local oscillator buffers. Wideband technique and layout optimization are taken into consideration in the RX. A fourstage LNA is devised to realize the high gain and low noise figure (NF) with a common-gate input stage and three pseudodifferential common-source stages.Optimized transistor layout and capacitor neutralization technique are developed to improve gain and noise performance. Transformer-based matching networks with the peak-staggered technique are adopted in the LNA to achieve a flatter gain response with a wider bandwidth (BW). The passive double-balanced mixers are implemented with a highly symmetrical layout for broadband down-conversion. Simulation results show that the mm-Wave RX front-end exhibits a BW ranging from 90 to 115 GHz. The simulated NF of our RX is 4.7 dB at 86 GHz. With a supply voltage of 1 V, the presented RX consumes 88.2-mW power and occupies a chip size of 1.6 Â 0.5 mm 2 including all the testing pads. The proposed RX is suitable for W-band imaging systems.

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Design of a D-Band CMOS Amplifier Utilizing Coupled Slow-Wave Coplanar Waveguides

Cited by 52 publications

References 40 publications

Cmos Low Noise Amplifier Design for Microwave and Mmwave Applications (Invited Review)

Cmos Low Noise Amplifier Design for Microwave and Mmwave Applications (Invited Review)

Wideband mm-Wave CMOS Slow Wave Coupler

A 90‐ to 115‐GHz superheterodyne receiver front‐end for W‐band imaging system in 28‐nm complementary metal‐oxide‐semiconductor

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