Design of a 2 × 2 MMI MZI SOI electro‐optic switch covering C band and L band

Tsao, Shyh‐Lin; Guo, Huang-Chen; Chen, Yi-Jr

doi:10.1002/mop.10292

Cited by 16 publications

(5 citation statements)

References 12 publications

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“…Glance literature survey shows that application examples for utilizing MMI couplers include electro-optic switches [3,4], MZI-based switches [5,6], passive MZI polarization splitters and convertors [7], microring resonators [8], optical 90° hybrids [9] and phased array wavelength division multiplexers (WDMs) [10]. Tapers are usually used to adapt the width of the interconnecting single mode waveguides to the wider width of the I/O access ports interfacing with the MMI coupler.…”

Section: Design Of the Passive Componentsmentioning

confidence: 99%

Design, simulation, and fabrication of nano-scale silicon-on-insulator (SOI) integrated photonic phased array switch elements (IPPAS) utilizing nanoelectromechanical systems (NEMS)

Hussein

Majid

Hall

2013

Photonics North 2013

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The goal of this research is to introduce the design and simulation of a novel 2×2 SOI integrated photonic phased array switch. Under-etched NEMS-operated slot waveguides are used as the active phase shifters offering the benefits of compact size and low power consumption. The design of the NEMS-operated phase shifter has been validated by numerical analysis and simulation. The finite difference mode three-dimensional full-vectorial solver of FIMMPROP is used for the simulation. The designed NEMS-operated phase shift element is only 349 µm in length, exhibits an excess loss of about 1.1 dB and provides a phase shift of 180º. Straight transition slot waveguide couplers with high efficiency of about 96.7% have been designed to couple the NEMS-operated phase shifters to standard unslotted waveguides. The 2×2 MMI (multimode interference) couplers used in the switch element feature a compact size of 4 µm × 61.2 µm, have a small excess loss of about 0.155 dB and minimal imbalance of about -0.004 dB. The NEMS-operated phase shifters are located on the sides of the switch with their outermost electrode bond pads. Optical interferogram response is utilized for the testing of the designed phase shifters.

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Section: Design Of the Passive Componentsmentioning

confidence: 99%

Design, simulation, and fabrication of nano-scale silicon-on-insulator (SOI) integrated photonic phased array switch elements (IPPAS) utilizing nanoelectromechanical systems (NEMS)

Hussein

Majid

Hall

2013

Photonics North 2013

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“…They are generally used in various Planar Lightwave Circuit (PLC) applications, including power splitters, optical switches, and wavelength division multiplexers/demultiplexers. MMI couplers based on different materials, such as LiNBO 3 [4], SOI [5], InP [6], polymer [7], silica-on-silicon (SOS) [8], etc., have been reported. The versatility and efficiency of MMI couplers make them a crucial component in modern integrated photonics devices.…”

Section: Introductionmentioning

confidence: 99%

Racetrack Ring Resonator Integrated with Multimode Interferometer Structure Based on Low-Cost Silica–Titania Platform for Refractive Index Sensing Application

Butt,

Shahbaz,

Piramidowicz

2023

Photonics

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In this work, a racetrack ring resonator (RTRR) integrated with a multimode interferometer (MMI) structure based on a silica–titania (SiO2:TiO2) platform is projected for refractive index sensing application. The typical ring resonator structure requires a gap of ~100 nm to 200 nm between the bus waveguide (WG) and the ring structure which makes it challenging to fabricate a precise device. Thus, the device proposed in this paper can be considered a “gapless” ring resonator structure in which the coupling of light between the ring and bus WG can be achieved via an MMI coupler. A minor change in the refractive index in the vicinity of the MMI structure can trigger a shift in the resonance wavelength of the device. Thus, this simple and fascinating structure can be employed as a refractive index sensor. The device’s sensitivity is ~142.5 nm/RIU in the refractive index range of 1.33 to 1.36 with a figure of merit (FOM) of 78.3. This simple device structure can potentially be fabricated via a low-cost and highly efficient sol–gel process and dip-coating method combined with the nanoimprint lithography (NIL) method.

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“…High performance, integrated optical power splitters and wavelength converters are indispensable for high speed, large scale, multiple access optical fiber network [1][2][3] . InP-based optical power splitters are of great advantage to photonic integration in 1.55-m μ optical communication systems compared with other material , such as AlGaAs/GaAs [4] , SOI [5][6] and so on.…”

Section: Introductionmentioning

confidence: 99%

Design and fabrication of a 1-by-4 multimode interference splitter based on InP

Zhang

Zhu

et al. 2011

SPIE Proceedings

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Design of a 2 × 2 MMI MZI SOI electro‐optic switch covering C band and L band

Abstract: This Letter a 2 ϫ 2 multimode interference (MMI) Mach-Zehnder interferometer (MZI) electro

Cited by 16 publications

References 12 publications

Design, simulation, and fabrication of nano-scale silicon-on-insulator (SOI) integrated photonic phased array switch elements (IPPAS) utilizing nanoelectromechanical systems (NEMS)

Design, simulation, and fabrication of nano-scale silicon-on-insulator (SOI) integrated photonic phased array switch elements (IPPAS) utilizing nanoelectromechanical systems (NEMS)

Racetrack Ring Resonator Integrated with Multimode Interferometer Structure Based on Low-Cost Silica–Titania Platform for Refractive Index Sensing Application

Design and fabrication of a 1-by-4 multimode interference splitter based on InP

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