Design of a 100watt high-efficiency power amplifier for the 10-500MHz band

Design of a broadband power amplifier using an optimized feedback network

“…Broadband amplifiers generally utilize a feedback method to flatten their power gain response over a broad operating frequency band [2–12]. One of the most general ways of providing feedback is a shunt network, which senses the output voltage and supplies the feedback current to the input current.…”

“…Broadband power amplifiers have been used in transmitters for military, medical, satellite, broadcasting, and instrumental applications [1–14]. Moreover, emerging broadband wireless communication systems, including various software‐defined or cognitive radio systems, require transmitters having a broader operational bandwidth.…”

Design and implementation of a 9W, 0.3–3.7 GHz linear power amplifier using GaN HEMT

“…GaN HEMTs have proven to be excellent emerging candidates for their well-established FETs counterparts. Due to their superior thermal and voltage breakdown properties and the feasibility of growing them on relatively high-thermal conductivity SiC substrates, GaN devices have relatively high power density with smaller die size, as well as smaller parasitic capacitances, when compared to silicon LDMOS FETs and GaAs MESFETs of similar output power; this allows relaxed operating conditions, low supply currents, and easy impedance matching which reduce design effort and makes GaN HEMTs the optimum choice to handle high power while exhibiting broader bandwidths than those demonstrated by other technologies [1], [7].…”

“…For such broadband transmitters, system performances are primarily determined by the performance of the power amplifiers, such as large bandwidth (with gain flatness over the bandwidth), required output power, good linearity, high efficiency, etc [1]. An increasing attention of scientific research is dedicated to the design of high performance power amplifiers [1] [3] [4] [7].…”

A quadband concurrent linear/efficient power amplifier for multiband wireless applications

“…Due to their superior thermal and voltage breakdown properties and the feasibility of growing them on relatively high-thermal conductivity SiC substrates, GaN devices have relatively high power density smaller die size, and lower parasitic capacitances, when compared to silicon LDMOS FETs and GaAs MESFETs of similar output power; this allows relaxed operating conditions, low supply currents, and easy impedance matching. Furthermore, it reduces design effort and makes GaN HEMTs the optimum choice to handle high power while exhibiting broader bandwidths than those demonstrated by other technologies [5] [12].…”