Design of a 10 kW GaN-based high power density three-phase inverter

Li, He; Zhang, Xuan; Zhang, Zhengda; Yao, Chengcheng; Qian, Feng; Hu, Boxue; Wang, Jin; Liu, Liming

doi:10.1109/ecce.2016.7855019

Cited by 45 publications

(14 citation statements)

References 13 publications

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“…Thus, a dc bias can consequently be generated after the downstream filter through the average of these positive and negative analog spikes. This relationship is shown in (2). It should be noticed that the polarity of the spikes could be reversed depending on internal logic of an iso-amp IC.…”

Section: ) Origin Of DC Biasmentioning

confidence: 92%

Impacts of High Frequency, High di/dt, dv/dt Environment on Sensing Quality of GaN Based Converters and Their Mitigation

Liu¹,

Ren²,

Zhang³

et al. 2018

CPSS TPEA

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A systematic study on a gallium nitride (GaN) highelectron-mobility transistor (HEMT) based battery charger, consisting of a Vienna-type rectifier plus a dc-dc converter, reveals a common phenomenon. That is, the high switching frequency, and high di/ dt and dv/dt noise inside GaN converters may induce a dc drift or low frequency distortion on sensing signals. The distortion mechanisms for different types of sensing errors are identified and practical minimization techniques are developed. Experimental results on the charger system have validated these mechanisms and corresponding approaches, showing an overall reduction of input current total harmonic distortion (THD) by up to 5 percentage points and improved dc-dc output voltage regulation accuracy. The knowledge helps engineers tackle the troublesome issues related to noise.

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Section: ) Origin Of DC Biasmentioning

confidence: 92%

Impacts of High Frequency, High di/dt, dv/dt Environment on Sensing Quality of GaN Based Converters and Their Mitigation

Liu¹,

Ren²,

Zhang³

et al. 2018

CPSS TPEA

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“…Different load conditions were used to validate the digital implementation. A 500-V-input, 10-kW, 100-kHz half-bridge inverter was designed in Reference [160] for ultra-low parasitic inductance and strong cooling capability. A gate drive circuit with comprehensive protection function was integrated to achieve a 17.5-kW/L power density.…”

Section: Single-phase Dc-ac Convertersmentioning

confidence: 99%

Review of GaN HEMT Applications in Power Converters over 500 W

2019

Electronics

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Because of the global trends of energy demand increase and decarbonization, developing green energy sources and increasing energy conversion efficiency are recently two of the most urgent topics in energy fields. The requirements for power level and performance of converter systems are continuously growing for the fast development of modern technologies such as the Internet of things (IoT) and Industry 4.0. In this regard, power switching devices based on wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are fast maturing and expected to greatly benefit power converters with complex switching schemes. In low- and medium-voltage applications, GaN-based high-electron-mobility transistors (HEMTs) are superior to conventional silicon (Si)-based devices in terms of switching frequency, power rating, thermal capability, and efficiency, which are crucial factors to enhance the performance of advanced power converters. Previously published review papers on GaN HEMT technology mainly focused on fabrication, device characteristics, and general applications. To realize the future development trend and potential of applying GaN technology in various converter designs, this paper reviews a total of 162 research papers focusing on GaN HEMT applications in mid- to high-power (over 500 W) converters. Different types of converters including direct current (DC)–DC, alternating current (AC)–DC, and DC–AC conversions with various configurations, switching frequencies, power densities, and system efficiencies are reviewed.

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“…The first‐generation GaN power transistor was first made available to the market in 2007 [3]. The current commercial maximum power of a GaN power transistor is 650 V/60 A designed by a GaN system company.…”

Section: Gan High Electron Mobility Transistor (Hemt) Three‐phase Dmentioning

confidence: 99%

“…The rapid development wide bandgap devices based on GaN and SiC provide the potential to improve the power density of power conversion systems [1–3]. Compared to its silicon (Si) counterparts, GaN offers lower resistance and higher switching speed under the same operating conditions.…”

Section: Introductionmentioning

confidence: 99%