Design of a 1-MHz High-Efficiency High-Power-Density Bidirectional GaN-Based CLLC Converter for Electric Vehicles

He, Peiwen; Mallik, Ayan; Sankar, Arun; Khaligh, Alireza

doi:10.1109/tvt.2018.2881276

Cited by 109 publications

(50 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It used TI's UCD138 as a digital controller of the converter on the control board. Compared with the DSP/MCU completely managed by software like TMS320F28335 used in [9], UCD138 has access to high-speed control circuit, multi-loop control and solution of SR, with its three modes switched automatically to meet the requirement of SR in variable frequencies. In the high-voltage side, the isolated driving chip Si8273 was accepted to drive GaN transistors.…”

Section: Experimental Verificationmentioning

confidence: 99%

“…For example, when the LLC resonant circuit operates in the reverse mode, it degenerates into a LC resonant circuit, with normalized dc gain below 1. In [6][7][8][9][10][11][12], a symmetric tank structure called CLLLC is proposed, as shown in Figure 2c. Although similar bidirectional voltage gain features are obtained, too many resonant components are used in CLLLC, which increases the volume of the converter and the error of analysis and design.…”

Section: Introductionmentioning

confidence: 99%

“…However, it is hard to meet the bidirectional application requirement with the limitation of the LLC topology in the reverse mode. In [9], GaN transistors were applied to the bidirectional CLLLC resonant converter with parameters based on the design methodology proposed in [6]. However, complicated principles and the high design requirements of the CLLLC converter disturb the successful application of GaN Moreover, with the continuous development of semiconductor technology, the third generation of wide-bandgap semiconductor devices, including gallium nitride (GaN) devices and silicon carbide (SiC) devices, have been developed to help BDCs achieve higher frequency, higher power density, and higher efficiency, replacing conventional devices like Si MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

“…However, complicated principles and the high design requirements of the CLLLC converter disturb the successful application of GaN Moreover, with the continuous development of semiconductor technology, the third generation of wide-bandgap semiconductor devices, including gallium nitride (GaN) devices and silicon carbide (SiC) devices, have been developed to help BDCs achieve higher frequency, higher power density, and higher efficiency, replacing conventional devices like Si MOSFETs. A summary of the material characteristics of these devices is shown in [9]. GaN has higher energy gap and electron velocity in contrast to SiC and Si, and thus GaN transistors possess better performance of lower on-resistance, faster switching speed, lower parasitic parameters, lower reverse recovery loss and so on.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Analysis and Design of High-Efficiency Bidirectional GaN-Based CLLC Resonant Converter

Liu

Wang

et al. 2019

Energies

View full text Add to dashboard Cite

A bidirectional CLLC resonant converter (CLLC-BRC) based on GaN transistors is analyzed and designed in this paper. Similar resonant topologies are listed and commented on, with the CLLC topology showing competitiveness in bidirectional energy transmission. The analysis of the aforementioned converter has been provided, including the reveal of resonant frequencies of the CLLC topology and an improved zero-voltage switching (ZVS) condition with operation principles of the reverse mode and relevant parasitic parameters taken into account. The design methodology of the aforementioned converter based on pulse frequency modulation (PFM) is further discussed in detail. A prototype with a rated power of 400 W and a maximal operating frequency that is larger than 0.5 MHz was built to verify the proposed design methodology. The highest conversion efficiency of the prototype was 97.02% in the forward mode, and it was 95.96% in the reverse mode.

show abstract

Section: Experimental Verificationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Analysis and Design of High-Efficiency Bidirectional GaN-Based CLLC Resonant Converter

Liu

Wang

et al. 2019

Energies

View full text Add to dashboard Cite

show abstract

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

Yadlapalli

Anuradha²,

Kandipati³

et al. 2021

Int J Energy Res

View full text Add to dashboard Cite

The third generation wide bandgap (WBG) semiconductor materials exhibit a prominent role in various applications such as adapters, uninterrupted power supplies, smart grids, and electric vehicles (EVs). They have the phenomenal properties such as high critical breakdown field, WBG, and high-saturated drift velocity as compared to the silicon (Si). This article throws a light on the classification and recent advancements of the GaN-based power devices along with their structural features. Moreover, it explores the critical issues that degrade the device performance and also various methods to improve their performance. The recently developed commercial GaN devices are enumerated with their figure of merits (FOMs) comparison with the Si and SiC devices. The outrageous features of GaN devices are well utilized for realizing the high power density and high efficiency power converters in case of EV applications. The updated survey of various GaN devices-based ac-dc, dc-dc, and dc-ac converters is presented along with their salient features. This article also emphasizes the approaches for resolving the power module issues such as parasitics, layout, and thermal design other than the power converters. This review is ultimately helpful for the design engineers to abridge the technical gaps arising due to the power electronics barriers.

show abstract

The Proposed Two-Stage Parameter Design Methodology of a Generalized Resonant DC Transformer in Hybrid AC/DC Microgrid with Optimum Active Power Transmission

Zhang

Lin

Zhao

et al. 2023

Holistic Design of Resonant DC Transformer on Constant Voltage Conversion, Cascaded Stability and High Efficiency

View full text Add to dashboard Cite

Design of a 1-MHz High-Efficiency High-Power-Density Bidirectional GaN-Based CLLC Converter for Electric Vehicles

Cited by 109 publications

References 19 publications

Analysis and Design of High-Efficiency Bidirectional GaN-Based CLLC Resonant Converter

Analysis and Design of High-Efficiency Bidirectional GaN-Based CLLC Resonant Converter

Advancements in energy efficientGaNpower devices and power modules for electric vehicle applications: a review

The Proposed Two-Stage Parameter Design Methodology of a Generalized Resonant DC Transformer in Hybrid AC/DC Microgrid with Optimum Active Power Transmission

Contact Info

Product

Resources

About