Design of 250-Mb/s Low-Power Fiber Optic Transmitter and Receiver ICs for POF Applications

Abstract

Abstract-This

Design of POF optoelectronic integrated transmitter and receiver

“…The monolithic integration of POF optical receiver is possible to be realized in the standard Si IC process for the 650nm response of silicon material [6]. Since a typical POF cable has a big core diameter close to 1mm [7,8], a multi-finger structure PIN large-area photodetector integrated in IC standard technology is desired for low-cost high-efficiency light coupling. The performance of optical receiver mainly depends on the characteristics of the integrated photodiode and the analog front-end.…”

Room-temperature electroluminescence from germanium in an Al_03Ga_07As/Ge heterojunction light-emitting diode by Γ-valley transport

“…Recently, optical devices based on group-IV materials have been widely studied for possible applications in the integrated silicon (Si) photonics systems [1][2][3][4][5][6][7]. Germanium (Ge) is considered as one of the most promising candidate materials compatible with Si complementary metal-oxide-semiconductor (CMOS) circuits since Ge can be grown on Si using relaxed Si x Ge 1-x buffer layers to reduce the effect of the 3.96% lattice mismatch between Ge and Si [6][7][8].…”

“…Recently, optical devices based on group-IV materials have been widely studied for possible applications in the integrated silicon (Si) photonics systems [1][2][3][4][5][6][7]. Germanium (Ge) is considered as one of the most promising candidate materials compatible with Si complementary metal-oxide-semiconductor (CMOS) circuits since Ge can be grown on Si using relaxed Si x Ge 1-x buffer layers to reduce the effect of the 3.96% lattice mismatch between Ge and Si [6][7][8]. Given the fact that light emission is the most efficient for directbandgap materials, in which electrons can transfer from the conduction band to the valence band with momentum conservation, various approaches for operating indirect-bandgap Ge as a direct-bandgap material by straining, alloying, or band-filling have been investigated [9][10][11][12][13][14][15][16].…”

Process Considerations for 80-GHz High-Performance p-i-n Silicon Photodetector for Optical Interconnect

“…Optical interconnect includes not only the waveguide itself but also light-emitting diode (LED) or laser as the light source, modulator, and photodetector. Integration on silicon (Si) substrate is strongly pursued owing to cost-effectiveness and complementary metal-oxide-semiconductor (CMOS) process compatibility [2][3][4][5][6], which makes it essential to exploit Si-compatible materials, structures, and process architecture highly suitable to integration with Si ICs.…”