Abstract:A 1 kbit antifuse one time programmable (OTP) memory IP, which is one of the non-volatile memory IPs, was designed and used for power management integrated circuits (ICs). A conventional antifuse OTP cell using a single positive program voltage (V PP ) has a problem when applying a higher voltage than the breakdown voltage of the thin gate oxides and at the same time, securing the reliability of medium voltage (V M ) devices that are thick gate transistors. A new antifuse OTP cell using a dual program voltage … Show more
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