2007
DOI: 10.1117/1.2744364
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Design methodology of annealed H+ waveguides in ferroelectric LiNbO3

Abstract: Relations between fabrication conditions and optical characteristics of planar waveguides made by proton exchange in benzoic acid are documented in the literature, but reports on the characterization of waveguide fabrication processes, performed in a systematic way, could not be found, resulting in the need to combine data from several authors. Discrepancies among results from different researches are evident, resulting from different experimental methodologies and calibration of equipment. Therefore, aiming a… Show more

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Cited by 13 publications
(5 citation statements)
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References 41 publications
(28 reference statements)
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“…We assume that it can be explained by the fact that in the case of the APE technique, after proton exchange and before annealing, the waveguides exhibit a step-like index profile. This shape of the index profile is the initial condition found in any modeling and experimental study of annealing in the case of the APE technique, which is not the case in our investigation [4][5][6][7][8]. Our initial conditions are quite different: the index profile is expressed as the sum of two generalized exponential functions, as presented in Figure 1, and in agreement with our previous work [1].…”
Section: Samples Fabrication and Index Profiles Reconstructionsupporting
confidence: 90%
“…We assume that it can be explained by the fact that in the case of the APE technique, after proton exchange and before annealing, the waveguides exhibit a step-like index profile. This shape of the index profile is the initial condition found in any modeling and experimental study of annealing in the case of the APE technique, which is not the case in our investigation [4][5][6][7][8]. Our initial conditions are quite different: the index profile is expressed as the sum of two generalized exponential functions, as presented in Figure 1, and in agreement with our previous work [1].…”
Section: Samples Fabrication and Index Profiles Reconstructionsupporting
confidence: 90%
“…An APE [27] y-propagating waveguide in z-cut LiNbO 3 is designed to be near cutoff at the working wavelength (λ = 1550 nm) and centered in a domain inverted region. The waveguide has a width of 3.5 μm and a depth of 4 μm, where the vertical profile is assumed to be half-Gaussian with an index step of around 0.02 [28]. Another lithium niobate substrate is afterward bonded on top of the waveguide.…”
Section: Electric Field Sensor Devicementioning
confidence: 99%
“…According to a previous study about the proton diffusion mechanism in amorphous SiO 2 [14], the activation energy for protons in SiO 2 (below 1 eV, depending on the different mechanisms and experiments) was smaller than that in LN (1.21 eV) [15]. So the amorphous SiO 2 layer probably could not prevent the protons from diffusing to a deeper place.…”
mentioning
confidence: 91%
“…The top 560 nm thin film was untouched, while the bottom part was replaced by a SiO 2 layer. The parameters related to the APE process, such as the diffusion coefficients, were determined according to the work in [15]. The PE time and anneal time were 5 min and 3 h, respectively (this condition was used to fabricate the channel waveguides, as discussed below).…”
mentioning
confidence: 99%