Design, Manufacture and Assembly of 3D Integrated Optical Transceiver Module Based on an Active Photonic Interposer

Zheng, Qi; Xue, Haizhou; Liu, Fengman; Cao, Liqiang; Wang, Qidong; He, Huimin; Dai, Fengwei; Sun, Pengtao

doi:10.3390/pr10112342

Cited by 2 publications

(2 citation statements)

References 24 publications

(27 reference statements)

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“…Moreover, the smaller the TSV depth, the corresponding interconnection delay and loss will also be reduced. After the thinning of the TSV transfer substrate, it is generally necessary to expose the TSV copper column from the back by a dry or wet etching process so as to realize the electrical signal connection on the back of the subsequent wafer [ 40 ]. Generally, there are two methods: dry process and wet process.…”

Section: Tsv Technology Process and Developmentmentioning

confidence: 99%

Research of Vertical via Based on Silicon, Ceramic and Glass

Tian

2023

Micromachines

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With the increasing demand for high-density integration, low power consumption and high bandwidth, creating more sophisticated interconnection technologies is becoming increasingly crucial. Three-dimensional (3D) integration technology is known as the fourth-generation packaging technology beyond Moore’s Law because of its advantages of low energy consumption, lightweight and high performance. Through-silicon via (TSV) is considered to be at the core of 3D integration because of its excellent electrical performance, lower power consumption, wider bandwidth, higher density, smaller overall size and lighter weight. Therefore, the particular emphasis of this review is the process flow of TSV technology. Among them, the research status of TSV hole etching, deep hole electroplating filling and chemical mechanical planarization (CMP) in TSV preparation process are introduced in detail. There are a multitude of inevitable defects in the process of TSV processing; thus, the stress problems and electrical characteristics that affect the reliability of TSV are summarized in this review. In addition, the process flow and process optimization status of through ceramic via (TCV) and through glass via (TGV) are discussed.

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Section: Tsv Technology Process and Developmentmentioning

confidence: 99%

Research of Vertical via Based on Silicon, Ceramic and Glass

Tian

2023

Micromachines

View full text Add to dashboard Cite

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“…Three-dimensional integration based on active photonic interposers can achieve the advantages of a high integration, high bandwidth, and low power consumption, which has become the main direction for next-generation optical module technology. For example, the author designed and verified the fabrication of optical transceivers and the 3D assembly of the modules integrated with edge couplers and RDL-TSV-RDL in [1], achieving ideal high frequency characteristics and extremely low optical coupling loss and the compatibility challenge of TSV and edge coupler fabrication. Different manufacturing processes are selected, verified, and optimized.…”

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confidence: 99%