Design guidelines for deep-sub-micrometer interconnections

Ushiku, Y.; Kushibe, H.; Ono, Hiroshi; Nishiyama, A.

doi:10.1109/vmic.1990.127916

Cited by 4 publications

(1 citation statement)

References 1 publication

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“…In ultralarge scale integration (ULSI) technology multilevel interconnections are required, where a problem may arise with a large RC delay time resulting from large parasitic capacitance of interlayer dielectrics [1]. One way to reduce the dielectric constant is to replace the silicon dioxide (SiO 2 ) by fluorinated silicon oxide (SiOF) [2,3].…”

Section: Introductionmentioning

confidence: 99%

FTIR study of fluorinated silicon oxide film

Kim

Kang

Kim

1997

J. Phys. D: Appl. Phys.

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Fluorinated silicon oxide (SiOF) films were prepared by plasma enhanced chemical vapour deposition (PECVD) and studied by FTIR spectroscopic measurements. As fluorination dosage increased, the band intensity of the Si - F stretching mode was observed to increase but the peak frequency and band width remained unchanged. The Si - O vibrational bands were found to increase in frequency and decrease in band width. The Si - O asymmetric stretching band was analysed. It was found that the average bond angle of Si - O - Si bond increased but the distribution of the bond angles decreased in width as fluorination dosage was increased.

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Section: Introductionmentioning

confidence: 99%

FTIR study of fluorinated silicon oxide film

Kim

Kang

Kim

1997

J. Phys. D: Appl. Phys.

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Preparation of fluorinated amorphous carbon thin films

Yokomichi

Hayashi

Amano

et al. 1998

Journal of Non-Crystalline Solids

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Performance improvements of the hydrophobic and the dielectric properties of parylene C

Sylvestre¹,

Laithier²

2013

Journal of Applied Physics

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The increase in the hydrophobicity at the same time as the reduction in the dielectric properties of an insulating material are the main factors necessary to improve the signal response of the electrowetting-on-dielectric and the organic field effect transistor electronic devices. Oxygen (O2) and fluorine (CF4) plasma treatments on 3.7 μm thicknesses-parylene C were carried out to understand the surface hydrophobicity character and their effect on the dielectric properties of the material. Fast hydrophobic recovery was observable during the first day after the O2 treatment due to the reorientation of the polar polymer end chains to the bulk of parylene C. CF4 plasma treatments reveal a noticeably increase of the hydrophobicity as the treatment time increases. Energy dispersive X-ray and Fourier transform infrared analyses have confirmed an increase in the number of fluorine containing CFx bonds where 1 ≤ x ≤ 3 after fluorine plasma treatments and after aging. The PPX C film treated with CF4 plasma at 500 W for 30 min indicated the best hydrophobic character and the best dielectric properties due to the highest loading fluorine content in our experimental conditions.

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Design guidelines for deep-sub-micrometer interconnections

Cited by 4 publications

References 1 publication

FTIR study of fluorinated silicon oxide film

FTIR study of fluorinated silicon oxide film

Preparation of fluorinated amorphous carbon thin films

Performance improvements of the hydrophobic and the dielectric properties of parylene C

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