Fluorinated silicon oxide (SiOF) films were prepared by plasma enhanced chemical vapour deposition (PECVD) and studied by FTIR spectroscopic measurements. As fluorination dosage increased, the band intensity of the Si - F stretching mode was observed to increase but the peak frequency and band width remained unchanged. The Si - O vibrational bands were found to increase in frequency and decrease in band width. The Si - O asymmetric stretching band was analysed. It was found that the average bond angle of Si - O - Si bond increased but the distribution of the bond angles decreased in width as fluorination dosage was increased.
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