Design Guidelines and Performance Tradeoffs in Recessed AlGaN/GaN Schottky Barrier Diodes

Soni, Ankit; Amogh, K M; Shrivastava, Mayank

doi:10.1109/ted.2020.3024354

Cited by 8 publications

(5 citation statements)

References 31 publications

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“…As a result of the investigation carried out, an optimal set of diode construction features was identified, as well as general dependences between design features and electrical parameters. The obtained dependences partially agree with the results presented in other works, in which the diodes were manufactured on CMOS fabs [15,16] and RF fabs [18][19][20][21][22][23][24][25][26][27][28]. Particularly, a decrease in reverse currents and an increase in forward currents with an increase in the depth of the subanode recess on structures with Ni SC was observed, as was the case in [22].…”

Section: Resultssupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

“…Many results of design and production of GaN Schottky barrier diodes (SBDs) have been presented [15][16][17][18][19][20][21][22][23][24][25][26][27][28]. Some research has been focused on CMOS fabs [15][16][17] and other research has focused on RF fabs [18][19][20][21][22][23][24][25][26][27][28]. To date, quite a lot of design features have been reported regarding SBDs, and most of reported results have used field plates for efficient electric field redistribution between anode and cathode, and increasing the diode's breakdown voltage (V BR ) [16]; increasing anode-to-cathode distance leads to an increase in the diode's resistance in the ON-state (R ON ) and V BR [29].…”

Section: Introductionmentioning

confidence: 99%

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The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications

2021

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In this paper, lateral AlGaN/GaN Schottky barrier diodes are investigated in terms of anode construction and diode structure. An original GaN Schottky diode manufacturing-process flow was developed. A set of experiments was carried out to verify dependences between electrical parameters of the diode, such as reverse and forward currents, ON-state voltage, forward voltage and capacitance, anode-to-cathode distance, length of field plate, anode length, Schottky contact material, subanode recess depth, and epitaxial structure type. It was found that diodes of SiN/Al0.23Ga0.77N/GaN epi structure with Ni-based anodes demonstrated two orders of magnitude lower reverse currents than diodes with GaN/Al0.25Ga0.75N/GaN epitaxial structure. Diodes with Ni-based anodes demonstrated lower VON and higher IF compared with diodes with Pt-based anodes. As a result of these investigations, an optimal set of parameters was selected, providing the following electrical characteristics: VON = 0.6 (at IF = 1 mA/mm), forward voltage of the diode VF = 1.6 V (at IF = 100 mA/mm), maximum reverse voltage VR = 300 V, reverse leakage current IR = 0.04 μA/mm (at VR = −200 V), and total capacitance C = 3.6 pF/mm (at f = 1 MHz and 0 V DC bias). Obtained electrical characteristics of the lateral Schottky barrier diode demonstrate great potential for use in energy-efficient power applications, such as 5G multiband and multistandard wireless base stations.

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Section: Resultssupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications

2021

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“…The temperature dependence of the forward and reverse characteristics is shown in figure 4. A negative temperature coefficient is observed in the forward current characteristics, and the 'thermal stable point' of the forward current is at a very low current level due to the current conduction being dominated by the tunneling mechanism [19], leading to fewer 'thermal runaway' problems [20]. At the same time, a temperature increase from 25 • C to 150 • C results in an increase in leakage by less than one order of magnitude.…”

Section: Device Structurementioning

confidence: 99%

Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity

Kang¹,

Zheng²,

Wu³

et al. 2021

Semicond. Sci. Technol.

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In this study, novel AlGaN/GaN Schottky barrier diodes (SBDs) are fabricated with thin-barrier (5 nm) AlGaN/GaN heterostructures, featuring recess-free technology, eliminating bombardment plasma damage, and leading to high device uniformity. Combining a gated-edge termination (GET) design and assistance with high-quality low-pressure chemical vapor deposition SiN x , a low reverse leakage current (∼10 nA mm −1 @−600 V) and a high reverse breakdown voltage of over 1.78 kV (@1 µA mm −1 ) are obtained. At the same time, we achieve a low turn-on voltage of 0.57 V and a low differential on-state resistance R on,sp of 1.49 mΩ cm 2 for thin-barrier GET SBDs with an anode-to-cathode distance (L AC ) of 15 µm, yielding a Baliga's figure of merit of 2120 MW cm −2 . Moreover, this proposed diode process flow is compatible with AlGaN/GaN high-electron-mobility transistors, which is promising for its integration in the smart GaN platform.

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“…6,7) The breakdown voltage (BV) is directly influenced by the electric field distribution, such that the very strong local electric field at the Schottky contact region shall be avoided. 8) The electric field profile can be homogenized by using such as the gated-edge termination, [9][10][11] tri-anode configuration, 12) field plates (FPs), [13][14][15][16][17][18] floating metal rings, 19,20) p-GaN termination [21][22][23][24] and polarization-induced electric field effect. 25) Among these candidates, FP structures have been widely used because of the easier technical process and the effective charge-coupling effect.…”

Section: Introductionmentioning

confidence: 99%

On the super-junction formed by using field plate for lateral AlGaN/GaN-based Schottky barrier diodes

Wang,

Huang,

Chu

et al. 2023

Jpn. J. Appl. Phys.

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In this work, by using numerical TCAD simulations, we have systematically studied the impact of different field plates on the electrical characteristics for lateral AlGaN/GaN-based Schottky barrier diodes (SBDs) with recessed anode. The field plate enables the formation of a super-junction. When compared with the reference device without a field plate, the proposed SBDs can generate charge-coupling effect between the field plate and the recessed anode region, which can effectively reduce the electric field magnitude at the metal/sidewall interface. We also find that the electric field profiles can be affected by the field plate length, insulation layer thickness and different insulation materials with various dielectric constants. By doing so, we can enhance the breakdown voltage by homogenizing the electric field distribution in the GaN drift layer. Then, the electric field at the recessed anode region can be decreased and the GaN drift layer can be extensively depleted

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Design Guidelines and Performance Tradeoffs in Recessed AlGaN/GaN Schottky Barrier Diodes

Cited by 8 publications

References 31 publications

The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications

The Influence of Design on Electrical Performance of AlGaN/GaN Lateral Schottky Barrier Diodes for Energy-Efficient Power Applications

Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity

On the super-junction formed by using field plate for lateral AlGaN/GaN-based Schottky barrier diodes

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