Design, Growth, Fabrication and Characterization of High-Band Gap InGaN/GaN Solar Cells

A Review of Ultrahigh Efficiency III-V Semiconductor Compound Solar Cells: Multijunction Tandem, Lower Dimensional, Photonic Up/Down Conversion and Plasmonic Nanometallic Structures

“…V OC of this 6J cell was however 5.33 V, significantly higher than the 3.09 V of the highest efficiency 3J cell, simply because of the series connection of six semiconductor materials. In-Ga-N nitride compound solar cells have been proposed and are currently being studied for the requirement of high-E g top subcells, with E g higher than 1.8 eV of In 0.49 Ga 0.51 P, for >3J multijunction stacking [37][38][39][40]. A fascinating advantage for this In-Ga-N system is its wide range of available E g , from 0.7 eV of InN to 3.4 eV of GaN [41].…”

Investigation of new approaches for InGaN growth with high indium content for CPV application

“…The detailed analysis of the factors responsible for the low V oc are under way and will be published somewhere else. Nevertheless, we can assume that it is strongly related to the quality of the p-GaN layer as shown by Neufeld et al [14] and ohmic contacts (a remaining Schottky barrier is probably existing [15]). …”

Effect of Piezoelectric polarization on Open Circuit Voltage of GaN/InGaN MQW Solar Cell

“…The III-nitrides offer substantial potential to develop ultra high efficiency solar cells due to their direct band gap ranging from 0.7eV (InN) to 6.2eV (AlN) [1]. The InGaN material system offers a wide range of direct band gaps that spans the bulk of the solar spectrum.…”

“…The biggest advantage is that it helps to absorb larger solar spectrum by arranging the absorption edges of the quantum wells in descending order (from 3.42 eV to 0.7 eV) [1]. The piezoelectric polarization is dominant at the interface of GaN/InGaN layers in the MQW structure due to lattice mismatch and different thermal expansion coefficients.…”