Design criteria for Amplifying Gates on triode thyristors

Kokosa, R.A.; Wolley, E.D.

doi:10.1109/iedm.1974.6219796

Cited by 8 publications

(1 citation statement)

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“…Pinholes in the glass film on such devices can lead to metal corrosion (7). Power devices of planar or mesa structure often use fused glass as a direct passivant on the high-voltage junction (169,126). Various techniques for highvoltage axial-lead diode passivation make use of beads of fused glass powder (79,80), glass sleeves with metal studs (56,44), or glass sleeves with glass beads as end seals (67).…”

Section: Alkali Barrier Layersmentioning

confidence: 99%

Passivation Coatings on Silicon Devices

Schnable

Kern

Comizzoli

1975

J. Electrochem. Soc.

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Passivation coatings are widely used to improve the performance and reliability of silicon devices of various types, ranging from discrete mesa‐type diodes and transistors to complex planar silicon integrated circuits, and including both hermetic and plastic‐encapsulated devices. This paper reviews the materials and techniques used to apply passivation coatings to completed silicon devices. Principal production techniques used in passivation of silicon devices include thermal oxidation, high‐temperature diffusion, high‐temperature chemical vapor deposition of Si3N4 or Al2O3 , low‐temperature chemical vapor deposition of glasslike SiO2 or phosphosilicate layers (deposited at approximately 400°C), rf sputtering of SiO2 , mechanical deposition of glass frit layers which are subsequently fused, and application of organic polymer films.The effects of passivation layers on silicon device reliability are discussed, and the interrelationships among the silicon device, the passivation layer or layers used and the final encapsulation are indicated. Pertinent references on passivation and on related topics are cited in the text.

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Section: Alkali Barrier Layersmentioning

confidence: 99%