Design considerations for charge‐compensated fast‐switching power MOSFET in the medium‐voltage range

Abstract

Low-voltage power metal-oxide-semiconductor field-effect transistors (MOSFETs) based on charge compensation using a field plate offer a significant reduction of the area-specific on-resistance. The extension of their blocking capability into the so-called medium-voltage range of 150-300 V promises devices with excellent properties being attractive for a wide range of applications. There are two approaches how this voltage-range extension can be realised. Both concepts are linked to different device performance and different development effort. This study discusses both concepts using the example of the 150 V device class and compares the performance gained at the device and application level.