Design considerations and electro-mechanical simulation of an inertial sensor based on a floating gate metal-oxide semiconductor field-effect transistor as transducer

Abarca-Jimenez, Griselda Stephany; Barranca, Mario Alfredo Reyes; Mendoza-Acevedo, S.; Cervantes, J. E. Munguía; Arce, Miguel Ángel Alemán

doi:10.1007/s00542-014-2274-9

Cited by 4 publications

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References 6 publications

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“…As the inertial transducer relies on the lateral capacitance of the electromechanical structure, a way to increase the capacitor area was devised. Besides designing a comb shape capacitor, the two structural metal layers should be electrically and mechanically joined, this was achieved forming a stack using the via plugs [7,8].…”

Section: Introductionmentioning

confidence: 99%

Surface micromachining of a micro electromechanical inertial transducer based on commercially available Floating Gate Transistor technology

Abarca-Jimenez

Rubio

Reyes-Barranca

et al. 2018

Superficies y Vacio

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This work presents the results of different surface micromachining processes done on a chip from On Semiconductor 0.5 µm commercially available CMOS technology. The intended objective is to fabricate a MEMS inertial transducer in a monolithic substrate, as the electronics for signal processing are based on a Floating Gate MOS transistor, fully integrated in the electromechanical structure. According to the available layers and design rules from the foundry, an inertial sensor chip was designed and fabricated, except the last post–processing step, i.e., the removal of the sacrificial layer and thus releasing the inertial structure based on a surface micromachining process, allowing the completed device to behave as designed.

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Section: Introductionmentioning

confidence: 99%