Design considerations and development of gate driver for 15 kV SiC IGBT

Kadavelugu, Arun; Bhattacharya, Subhashish

doi:10.1109/apec.2014.6803505

Cited by 67 publications

(26 citation statements)

References 9 publications

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“…The low coupling capacitance is obtained by placing turns on opposite sides of a ferrite toroidal core covered with insulation [7]. The coupling capacitance curve of the gate driver is shown in Fig.…”

Section: B Gate Driver Development and Validationmentioning

confidence: 99%

“…All the tests up to 10 kV are done by building a boost converter from the available laboratory power supply of 3 kV. The complete details of the gate driver design, its testing and the robustness validation under high dv/dt are presented in [7]. …”

Section: B Gate Driver Development and Validationmentioning

confidence: 99%

“…The switching characteristics of the 15 kV N-IGBTs with comparison of fieldstop buffer layer thicknesses of 2 μm and 5 μm have been reported in [3]. The design and validation of 11 kV, over 100 kV/μs dv/dt immunity gate driver for the SiC IGBT has been reported in [7]. This was followed by heat-run tests of the SiC IGBT at 10 kV dc-bus at 146 o C junction temperature and 550 W/cm2 (active area) [8].…”

Section: Introductionmentioning

confidence: 97%

See 2 more Smart Citations

Medium voltage power converter design and demonstration using 15 kV SiC N-IGBTs

Kadavelugu

Krishna

Patel

et al. 2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

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This paper summarizes the different steps that have been undertaken to design medium voltage power converters using the state-of-the-art 15 kV SiC N-IGBTs. The 11 kV switching characterization results, 11 kV high dv/dt gate driver validation, and the heat-run test results of the SiC IGBT at 10 kV, 550 W/cm 2 (active area) have been recently reported as individual topics. In this paper, it is attempted to link all these individual topics and present them as a complete subject from the double pulse tests to the converter design, for evaluating these novel high voltage power semiconductor devices. In addition, the demonstration results of two-level H-Bridge and three-level NPC converters, both at 10 kV dc input, are being presented for the first-time. Lastly, the performance of two-chip IGBT modules for increased current capability and demonstration of three-level poles, built using these modules, at 10 kV dc input with sine-PWM and square-PWM modulation for rectifier and dc-dc stages of a three-phase solid state transformer are presented.

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Section: B Gate Driver Development and Validationmentioning

confidence: 99%

Section: B Gate Driver Development and Validationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 97%

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Medium voltage power converter design and demonstration using 15 kV SiC N-IGBTs

Kadavelugu

Krishna

Patel

et al. 2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

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“…Based on these data, the 3-level NPC power circuit is designed. The design and validation of gate driver for the 15 kV SiC [GBT are provided in [10]. (Fig.…”

Section: Introductionmentioning

confidence: 99%

Solid State Transformer and MV grid tie applications enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs based multilevel converters

Madhusoodhanan

Tripathi

Patel

et al. 2014

2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA)

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Recently, medium voltage SiC devices have been developed which can be used for grid tie applications at medium voltage. Two such devices -15 kV SiC IGBT and 10 kV SiC MOSFET have opened up the possibility of looking into different converter topologies for medium voltage distribution grid interface. These can be used in medium voltage drives, active filter applications or as the active front end converter for Solid State Transformers (SST). Transformer-less Intelligent Power Substation (TIPS) is one such application for these devices. TIPS is proposed as a 3-phase SST interconnecting 13.8 kV distribution grid with 480 V utility grid. The Front End Converter (FEC) of TIPS is made up of 15 kV SiC IGBTs.This paper focuses on the advantages, design considerations and challenges associated with the operation of converters using these devices keeping TIPS as the topology of reference.

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“…The major origin of a disturbance of the gate drive circuit is due to return current injected by high V/ during turn-off of the a power device switch [1,[6][7][8][9][10][11][12][13][14]. The feedback of a small fly back converter may be disturbed by its controlling circuit.…”

Section: Introductionmentioning

confidence: 99%

Less-Conventional Low-Consumption Galvanic Separated MOSFET-IGBT Gate Drive Supply

Bikorimana¹,

Bossche²

2017

Active and Passive Electronic Components

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A simple half-bridge, galvanic separated power supply which can be short circuit proof is proposed for gate driver local supplies. The supply is made while hacking a common mode type filter as a transformer, as the transformer shows a good insulation, it has a very low parasitic capacitance between primary and secondary coils, and it is cost-effective. Very low standby losses were observed during lab experiments. This makes it compatible with energy efficient drives and solar inverters.

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Design considerations and development of gate driver for 15 kV SiC IGBT

Cited by 67 publications

References 9 publications

Medium voltage power converter design and demonstration using 15 kV SiC N-IGBTs

Medium voltage power converter design and demonstration using 15 kV SiC N-IGBTs

Solid State Transformer and MV grid tie applications enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs based multilevel converters

Less-Conventional Low-Consumption Galvanic Separated MOSFET-IGBT Gate Drive Supply

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