Solid State Transformer and MV grid tie applications enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs based multilevel converters

Madhusoodhanan, Sachin; Tripathi, Awneesh; Patel, Dhaval; Krishna, M.; Kadavelugu, Arun; Hazra, Samir; Bhattacharya, Subhashish; Hatua, Kamalesh

doi:10.1109/ipec.2014.6869800

Cited by 60 publications

(77 citation statements)

References 15 publications

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“…Using 10 kV SiC MOSFETs or 15 kV SiC IGBTs, several power converters such as boost converters and modular-leg converters have been fabricated, demonstrating good power efficiencies [19][20][21][22]. The major technological challenges for development of ultrahigh-voltage SiC bipolar devices include fast epitaxial growth, reduction of extended defects, control of carrier lifetimes, surface passivation, and packages.…”

Section: Of 15mentioning

confidence: 99%

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

et al. 2016

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Although various silicon carbide (SiC) power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of high-voltage SiC bipolar devices are presented, taking account of the injection-level dependence of carrier lifetimes. It is shown that the major limitation of SiC bipolar devices originates from band-to-band recombination, which becomes significant at a high-injection level. A trial of unipolar/bipolar hybrid operation to reduce power loss is introduced, and an 11 kV SiC hybrid (merged pin-Schottky) diodes is experimentally demonstrated. The fabricated diodes with an epitaxial anode exhibit much better forward characteristics than diodes with an implanted anode. The temperature dependence of forward characteristics is discussed.

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Section: Of 15mentioning

confidence: 99%

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

et al. 2016

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“…This variation is described by (5). In the instant D 2 T s , the current is zero and the switch S 1 turned-off (at ZCS) and the MV bridge imposes v a = 0.…”

Section: A Triangular Current Mode Modulation Strategymentioning

confidence: 99%

Quad-active-bridge as cross-link for medium voltage modular inverters

Costa

Buticchi

Liserre

2015

2015 IEEE Energy Conversion Congress and Exposition (ECCE)

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Abstract-The Smart Transformer, a Solid-State transformer with control functionalities, is a promising smart grid technology. One of the main challenge of this system lies in making available a Medium-Voltage dc link, which can be tackled with modular solution. Thus, several isolated dc-dc converter can be used as a basic modules. In this paper, a Quad-Active-Bridge (QAB) dcdc converter is used as modules for the entire dc-dc conversion stage of a ST. Besides the feature of high power density and soft-switching operation (also found in others converters), this converter offers an additional power path, named "MV crosslink" through the HF transformer in the Medium-Voltage (MV) side, increasing the power controllability among the MV cell without involving the LV side. To ensure soft-switching for all operation range of the QAB converter, the triangular current mode modulation strategy, previously study for the dual-activebridge converter, is extended to the QAB converter in this work. In addition, it is considered to use in the MV side the H-Bridge cell and the multilevel neutral-point-clamped cell, to reduce the required voltage rating of the semiconductors. The theoretical analysis is performed for both converters. The theoretical analysis is verified by simulation and experimental results.

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“…However, the switching frequency of general IGBT devices is less than 50 kHz. To improve the low switching frequency problem of IGBT devices, multilevel converters [9][10][11] using Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices have been developed in medium power converters to reduce converter volume. However, the high switching frequency will also increase core losses on magnetic components and switching losses on power MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

Series-Connected High Frequency Converters in a DC Microgrid System for DC Light Rail Transit

Lin

2018

Energies

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This paper studies and presents a series-connected high frequency DC/DC converter connected to a DC microgrid system to provide auxiliary power for lighting, control and communication in a DC light rail vehicle. Three converters with low voltage and current stresses of power devices are series-connected with single transformers to convert a high voltage input to a low voltage output for a DC light rail vehicle. Thus, Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with a low voltage rating and a turn-on resistance are adopted in the proposed circuit topology in order to decrease power losses on power switches and copper losses on transformer windings. A duty cycle control with an asymmetric pulse-width modulation is adopted to control the output voltage at the desired voltage level. It is also adopted to reduce switching losses on MOSFETs due to the resonant behavior from a leakage inductor of an isolated transformer and output capacitor of MOSFETs at the turn-on instant. The feasibility and effectiveness of the proposed circuit have been verified by a laboratory prototype with a 760 V input and a 24 V/60 A output.

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Solid State Transformer and MV grid tie applications enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs based multilevel converters

Cited by 60 publications

References 15 publications

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

Quad-active-bridge as cross-link for medium voltage modular inverters

Series-Connected High Frequency Converters in a DC Microgrid System for DC Light Rail Transit

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