Design consideration of -doping channels for high-performance n+ - GaAs / p+ -InGaP/n-GaAs camel-gate field effect transistors

Tsai, Jung‐Hui; Chen, Jeng-Shyan; Chu, Yu-Jui

doi:10.1016/j.spmi.2004.06.002

Cited by 3 publications

(1 citation statement)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…After the calculation, we find that the GVS is about 5 V. The value of G m is the slope from the I ds -V gs curve, so a larger value of GVS will improve the linearity. Thus, the large GVS of our ZnO MOSFETs could provide better linear behavior than some kinds of GaAs [19] or GaN-based [20] MOSFETs, which is very important for practical amplifier applications.…”

Section: Resultsmentioning

confidence: 99%

A ZnO-based MOSFET with a photo-CVD SiO₂gate oxide

Young¹,

Ji²,

Chang³

et al. 2009

Semicond. Sci. Technol.

View full text Add to dashboard Cite

We demonstrate that a high quality SiO 2 was successfully deposited onto ZnO by photochemical vapor deposition (photo-CVD). ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) were also fabricated with such a photo-CVD oxide as the insulating layer. As compared with similar structure of ZnO-based metal-semiconductor FETs (MESFETs), it can be found that the gate leakage current was decreased to more than three orders of magnitude by inserting the photo-CVD oxide layer between ZnO and gate metal. With the 2 μm gate length, we also found that the saturated I ds and maximum G m of the fabricated ZnO-based MOSFET were 61.1 mA mm −1 and 10.2 mS mm −1 , respectively.

show abstract

Section: Resultsmentioning

confidence: 99%