A ZnO-based MOSFET with a photo-CVD SiO₂gate oxide

Abstract

We demonstrate that a high quality SiO 2 was successfully deposited onto ZnO by photochemical vapor deposition (photo-CVD). ZnO-based metal-oxide-semiconductor field effect transistors (MOSFETs) were also fabricated with such a photo-CVD oxide as the insulating layer. As compared with similar structure of ZnO-based metal-semiconductor FETs (MESFETs), it can be found that the gate leakage current was decreased to more than three orders of magnitude by inserting the photo-CVD oxide layer between ZnO and gate metal. With the 2 μm gate length, we also found that the saturated I ds and maximum G m of the fabricated ZnO-based MOSFET were 61.1 mA mm −1 and 10.2 mS mm −1 , respectively.

Electrical properties of amorphous-Al2O3/single-crystal ZnO heterointerfaces

“…It has attracted considerable attentions as channel layers for metal-insulator-semiconductor field effect transistors (MISFETs). [7][8][9][10][11][12][13][14] Recently, high-quality single crystalline ZnO wafers grown by a hydrothermal method have been commercially available, 15 which enables us to fabricate ZnO-based MISFETs with excellent electrical properties.…”

Band Configuration of SiO2/m-Plane ZnO Heterointerface Correlated with Electrical Properties of Al/SiO2/ZnO Structures

“…5) It is one of the important wide-bandgap semiconductors and has attracted considerable attentions as channel layers for thin film metal-insulator-semiconductor field effect transistors (MISFETs). [6][7][8][9][10][11] SiO 2 , Al 2 O 3 , and HfO 2 are three common materials used as oxide insulators for MISFETs. Chen et al 12) investigated band structure of HfO 2 /ZnO by in-situ X-ray photoelectron spectroscopy (XPS).…”