Thin film transistors based on TiO2 fabricated by using radio-frequency magnetron sputtering

Shih, Wei-Shun; Young, Sheng-Joue; Ji, Liang‐Wen; Water, Willem van de; Meen, Teen-­Hang; Lam, Kin-Tak; Sheen, Jyh; Chu, Wenjing

doi:10.1016/j.jpcs.2010.08.024

Cited by 4 publications

(2 citation statements)

References 15 publications

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“… Growth method Conductive type Mobility (cm 2 /Vs) On/off current ratio Ref. RF sputtering n-type 10.7 10 4 12 RF sputtering n-type 0.03 1.45 × 10 2 23 RF sputtering n-type 0.01 10 4 24 RF sputtering n-type 0.11 3.4 × 10 5 25 DC sputtering n-type 0.002 10 4 26 MOCVD n-type 0.063 2.7 × 10 5 27 ALD n-type 0.014 4.3 × 10 5 28 ALD n-type 0.47 10 5 29 Solution method n-type 0.239 3.85 × 10 5 30 HIPIMS n-type 0.7 2.5 × 10 5 This study p-type 0.2 1.7 × 10 4 …”

Section: Resultsmentioning

confidence: 99%

Tunability of p- and n-channel TiOx thin film transistors

Peng

Chen

et al. 2018

Sci Rep

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To acquire device-quality TiOx films usually needs high-temperature growth or additional post-thermal treatment. However, both processes make it very difficult to form the p-type TiOx even under oxygen-poor growth condition. With the aid of high energy generated by high power impulse magnetron sputtering (HIPIMS), a highly stable p-type TiOx film with good quality can be achieved. In this research, by varying the oxygen flow rate, p-type γ-TiO and n-type TiO2 films were both prepared by HIPIMS. Furthermore, p- and n-type thin film transistors employing γ-TiO and TiO2 as channel layers possess the field-effect carrier mobilities of 0.2 and 0.7 cm2/Vs, while their on/off current ratios are 1.7 × 104 and 2.5 × 105, respectively. The first presented p-type γ-TiO TFT is a major breakthrough for fabricating the TiOx-based p-n combinational devices. Additionally, our work also confirms HIPIMS offers the possibility of growing both p- and n-type conductive oxides, significantly expanding the practical usage of this technique.

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Section: Resultsmentioning

confidence: 99%

Tunability of p- and n-channel TiOx thin film transistors

Peng

Chen

et al. 2018

Sci Rep

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“…The typical transistor I on / Ó 2018 The Minerals, Metals & Materials Society I off ratio reported for TiO 2 TFTs deposited by different techniques ranges from 10 2 to< 5 9 10 5 . [19][20][21][22][23][24] In this work, we present TiO 2 TFTs with I on /I off ratio exceeding 10 6 .…”

Section: Introductionmentioning

confidence: 99%

Electronic and Optical Properties of Atomic Layer-Deposited ZnO and TiO2

Ateş

Bolat

Oruc

et al. 2018

Journal of Elec Materi

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Metal oxides are attractive for thin film optoelectronic applications. Due to their wide energy bandgaps, ZnO and TiO 2 are being investigated by many researchers. Here, we have studied the electrical and optical properties of ZnO and TiO 2 as a function of deposition and post-annealing conditions. Atomic layer deposition (ALD) is a novel thin film deposition technique where the growth conditions can be controlled down to atomic precision. ALD-grown ZnO films are shown to exhibit tunable optical absorption properties in the visible and infrared region. Furthermore, the growth temperature and post-annealing conditions of ZnO and TiO 2 affect the electrical properties which are investigated using ALD-grown metal oxide as the electron transport channel on thin film field-effect devices.

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Electrical Characteristics of Thin-Film Transistors Fabricated Utilizing a UV/Ozone-Treated TiO2 Channel Layer

Chong

Kim

2012

Journal of Elec Materi

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Thin film transistors based on TiO2 fabricated by using radio-frequency magnetron sputtering

Cited by 4 publications

References 15 publications

Tunability of p- and n-channel TiOx thin film transistors

Tunability of p- and n-channel TiOx thin film transistors

Electronic and Optical Properties of Atomic Layer-Deposited ZnO and TiO2

Electrical Characteristics of Thin-Film Transistors Fabricated Utilizing a UV/Ozone-Treated TiO2 Channel Layer

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