Design Concepts for High-Power PIN Diode Limiting

Brown, Nate

doi:10.1109/tmtt.1967.1126573

Cited by 41 publications

(5 citation statements)

References 8 publications

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“…The typical placement between two different stages is about λ /4 which could be determined by the transmission line impedance transformation method. According to Brown's experimental data, the PIN diode with junction width about 2.5 μm could be used up to 10 GHz, which provide a helpful diode selection guidance on microwave limiter circuit [2]. In this design, the CLA series limiter diode chips of Skyworks product are used to realise multi‐stage configuration, whose parameters are tabulated in Table 1 [9], and their power dissipation at the high‐power pulse signals can be expressed by (2)

P_{normaldiss} = \frac{175 - T_{normalamb}}{DF \times θ_{normalave} + K \times θ_{normalpulse}}

where T amb is the maximum ambient temperature, DF is the duty factor and K is the normalised factor to 1 μs pulse, while θ ave and θ pulse represent the average and 1 μs pulse thermal impedance, respectively.…”

Section: Design Of the Balance Limitermentioning

confidence: 99%

“…Introduction: Limiter is an important microwave control device which passes low incident power but attenuates high-power signals without any external power supply. It is widely used in radar receiver systems to protect power sensitive circuits such as low-noise amplifiers [1][2][3]. Microwave limiters with compact size, planar configuration and high electrical performance are in great demand in radar system.…”

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confidence: 99%

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Miniaturised X‐band balanced microwave limiter based on thin film hybrid integrated circuit technology

Zhang

et al. 2016

Electron. lett.

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On the basis of thin film hybrid integrated circuit technology, a miniaturised X‐band balanced microwave limiter with low insertion loss (IL), low spike and flat leakage power and short recovery time has been presented. The balanced circuit configuration improves the power capacity of the PIN diodes, provides the absorptive load for the reflected power and also effectively tackles the problem of suffering high incident power. The measured results show that the balanced microwave limiter could suffer a pulse with 150 W peak power and 3% duty ratio while the leakage power is <10 mW, and the small signal IL of the circuit is <1.4 dB in the frequency range from 8.8 to 9.8 GHz.

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P_{normaldiss} = \frac{175 - T_{normalamb}}{DF \times θ_{normalave} + K \times θ_{normalpulse}}

Section: Design Of the Balance Limitermentioning

confidence: 99%

mentioning

confidence: 99%

Miniaturised X‐band balanced microwave limiter based on thin film hybrid integrated circuit technology

Zhang

et al. 2016

Electron. lett.

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“…It acts as a buffer against high-power signals while exhibiting low loss at small signal levels. (p-i-n)-type diodes are commonly used in limiter circuits because they can handle highpower signals [1,2] and are commercially available.…”

Section: Introductionmentioning

confidence: 99%

Design and characterisations of double-channel GaAs pHEMT Schottky diodes based on vertically stacked MMICs for a receiver protection limiter

Haris

Kyabaggu

Rezazadeh

2016

Semicond. Sci. Technol.

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A microwave receiver protection limiter circuit has been designed, fabricated and tested using vertically stacked GaAs MMIC technology. The limiter circuit with a dimension of 2.5 × 1.3 mm 2 is formed by using double-channel AlGaAs/InGaAs pseudomorphic HEMT (pHEMT) Schottky diodes integrated with a low-loss V-shaped coplanar waveguide multilayer structure. The electrical parameter characteristics of the pHEMT Schottky diodes are presented including the C-V profile showing the presence of a double channel in the device layer structure. This unique feature can also be seen from the double-peak responses of the electron density as a function of the device layer width, which represent the high electron concentration at two different 2-DEG layers of the structure. An equivalent circuit model of pHEMT Schottky diodes is demonstrated showing good agreement with the measurement results. At zero-bias condition, the devices show high performance in diode detector applications with voltage sensitivities of more than 89 mV μW −1 at 10 GHz and at least 5.4 mV μW −1 at 35 GHz. The measurement results of the limiter circuit demonstrated the blocking of input power signals greater than 20 dBm input power at 3 GHz. To the best of our knowledge this is the first demonstration of the use of pHEMT Schottky diodes in microwave power limiter applications.

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“…Currently, system designers must choose between two broad categories of limiters, each with their own strengths and weaknesses. The first category is composed of PIN diode [1] and gas discharge [2] limiters. Such limiters can be made to exhibit low loss under low-power conditions, and their response is relatively fast.…”

Section: Introductionmentioning

confidence: 99%

Power-dependent bandstop filters for frequency-selective limiting

Naglich

Guyette

2016

2016 IEEE MTT-S International Microwave Symposium (IMS)

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Abstract-The use of a power-dependent coupling structure that allows a cul-de-sac bandstop filter topology to continuously transform between a resonant all-pass response and a bandstop filter response with increasing input power is shown. In contrast to limiter devices that provide a wideband short circuit or ferrite resonance under high-power excitation, the concept presented in this paper provides the ability to design limiters with frequencyselectivity and without magnetic materials. For verification, a third-order power-dependent bandstop filter was designed and fabricated. It has a center frequency of 2.15 GHz, 3 dB bandwidth of 400 MHz, 1 dB limiting threshold of approximately 25 dBm, a response time of 10 ns, and provides over 16 dB of limiting.

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Design Concepts for High-Power PIN Diode Limiting

Cited by 41 publications

References 8 publications

Miniaturised X‐band balanced microwave limiter based on thin film hybrid integrated circuit technology

Miniaturised X‐band balanced microwave limiter based on thin film hybrid integrated circuit technology

Design and characterisations of double-channel GaAs pHEMT Schottky diodes based on vertically stacked MMICs for a receiver protection limiter

Power-dependent bandstop filters for frequency-selective limiting

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