Design and Validation of 100 nm GaN-On-Si Ka-Band LNA Based on Custom Noise and Small Signal Models

Pace, Lorenzo; Colangeli, Sergio; Ciccognani, Walter; Longhi, Patrick E.; Limiti, Ernesto; Leblanc, Rémy; Feudale, M.; Vitobello, Fabio

doi:10.3390/electronics9010150

Cited by 22 publications

(12 citation statements)

References 22 publications

(16 reference statements)

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“…As a first test vehicle of the extracted small-signal and noise models, a Ka-band lownoise amplifier is briefly illustrated [22] which is an improved version of the PDK-based design presented in Reference [23]. The LNA adopts a 4-stage topology and covers the 35-37 GHz frequency range.…”

Section: Test Vehiclesmentioning

confidence: 99%

“…The characterization and modeling activities performed in the framework of the MiGaNSOS project are described in detail in Section 3. As a demonstration of the technology and of the models extracted, Section 4 overviews two MMICs operating at millimeter-waves which have been described in greater detail elsewhere [22][23][24]. The more novel ideas and methods of the characterization and modeling activities are discussed in Section 5, which also sketches the direction for further improving the V-band cold-source test bench.…”

Section: Introductionmentioning

confidence: 99%

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Linear Characterization and Modeling of GaN-on-Si HEMT Technologies with 100 nm and 60 nm Gate Lengths

et al. 2021

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Motivated by the growing interest towards low-cost, restriction-free MMIC processes suitable for multi-function, possibly space-qualified applications, this contribution reports the extraction of reliable linear models for two advanced GaN-on-Si HEMT technologies, namely OMMIC’s D01GH (100 nm gate length) and D006GH (60 nm gate length). This objective is pursued by means of both classical and more novel approaches. In particular, the latter include a nondestructive method for determining the extrinsic resistances and an optimizaion-based approach to extracting the remaining parasitic elements: these support standard DC and RF measurements in order to obtain a scalable, bias-dependent equivalent-circuit model capturing the small-signal behavior of the two processes. As to the noise model, this is extracted by applying the well known noise-temperature approach to noise figure measurements performed in two different frequency ranges: a lower band, where a standard Y-factor test bench is used, and an upper band, where a custom cold-source test bench is set up and described in great detail. At 5 V drain-source voltage, minimum noise figures as low as 1.5 dB and 1.1 dB at 40 GHz have been extracted for the considered 100 nm and 60 nm HEMTs, respectively: this testifies the maturity of both processes and the effectiveness of the gate length reduction. The characterization and modeling campaign, here presented for the first time, has been repeatedly validated by published designs, a couple of which are reviewed for the Reader’s convenience.

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Section: Test Vehiclesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Linear Characterization and Modeling of GaN-on-Si HEMT Technologies with 100 nm and 60 nm Gate Lengths

et al. 2021

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“…However, due to the lossy silicon substrate and low carrier mobility, these LNAs have relatively poor noise figure, gain, and linearity performance. III-V semiconductors such as GaN and GaAs have significant advantages in intrinsic gain and noise performance, so they are widely used in mm-wave front-end modules [8,9,10,11,12,13,14,15,16,17,18,19]. Furthermore, GaN technology is costly.…”

Section: Introductionmentioning

confidence: 99%

A 1.6-dB minimum NF, 28-38GHz GaAs low noise amplifier using wideband multistage noise matching technique

Yang

Wang

Zhang

et al. 2022

IEICE Electron. Express

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This letter presents a 28-38 GHz low-noise-amplifier (LNA) monolithic microwave integrated circuit (MMIC) using 0.15 µm GaAs pseudomorphic high electron mobility transistor (pHEMT) process. Inductive degeneration and shunt-series peaking techniques are employed to obtain simultaneous input and noise matching (SINM) and wideband flat gain. A novel wideband multistage noise matching technique based on a high-pass matching network is proposed to achieve low NF and further improve gain flatness over a wide frequency range. A four-stage LNA prototype is designed and fabricated based on the proposed technique. Measurement results show that the proposed LNA has a 1.6-dB minimum NF and an average gain of 23.7 dB in the entire operating band. S11 and S22 are better than −10 dB from 30 to 37 GHz. The measured output 1-dB compression point (OP 1d B ) is higher than 14.8 dBm from 28 to 38 GHz. The chip is realized within 2.1*1.5 mm 2 and consumes 56 mA current from a 5 V supply.

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“…Although the electro-thermal device simulation is undoubtedly a very powerful and costless tool to deeply understand the underlying physics behind the operation of the transistor in order to improve the device fabrication, the measurement-based investigation is a step of crucial importance for achieving a reliable validation of a transistor technology prior to its use in real applications. Typically, measurements are coupled with the extraction of a small-signal equivalent-circuit model, which can be used as cornerstone for building both large-signal [ 27 , 28 , 29 ] and noise [ 30 , 31 , 32 ] transistor models that are essential for a successful design of microwave high-power [ 33 , 34 , 35 , 36 ] and low-noise amplifiers [ 36 , 37 , 38 ]. Compared to the effective modeling approach based on using artificial neural networks (ANNs) [ 39 , 40 ], the equivalent-circuit model allows a physically meaningful description [ 41 , 42 , 43 ], thereby enabling development of a sensitivity-based investigation.…”

Section: Introductionmentioning

confidence: 99%

An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

2021

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Presently, growing attention is being given to the analysis of the impact of the ambient temperature on the GaN HEMT performance. The present article is aimed at investigating both DC and microwave characteristics of a GaN-based HEMT versus the ambient temperature using measured data, an equivalent-circuit model, and a sensitivity-based analysis. The tested device is a 0.15-μm ultra-short gate-length AlGaN/GaN HEMT with a gate width of 200 μm. The interdigitated layout of this device is based on four fingers, each with a length of 50 μm. The scattering parameters are measured from 45 MHz to 50 GHz with the ambient temperature varied from −40 °C to 150 °C. A systematic study of the temperature-dependent performance is carried out by means of a sensitivity-based analysis. The achieved findings show that by the heating the transistor, the DC and microwave performance are degraded, due to the degradation in the electron transport properties.

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Design and Validation of 100 nm GaN-On-Si Ka-Band LNA Based on Custom Noise and Small Signal Models

Cited by 22 publications

References 22 publications

Linear Characterization and Modeling of GaN-on-Si HEMT Technologies with 100 nm and 60 nm Gate Lengths

Linear Characterization and Modeling of GaN-on-Si HEMT Technologies with 100 nm and 60 nm Gate Lengths

A 1.6-dB minimum NF, 28-38GHz GaAs low noise amplifier using wideband multistage noise matching technique

An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

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