Design and TCAD simulations of planar active-edge pixel sensors for future XFEL applications

Betta, Gian-Franco Dalla; Batignani, G.; Benkechkache, Mohamed El Amine; Bettarini, S.; Casarosa, G.; Comotti, D.; Fabris, L.; Forti, F.; Grassi, M.; Latreche-Lassoued, Saida; Lodola, L.; Malcovati, P.; Manghisoni, M.; Mendicino, R.; Morsani, F.; Paladino, A.; Pancheri, Lucio; Paoloni, E.; Ratti, L.; Re, V.; Rizzo, G.; Traversi, G.; Vacchi, C.; Verzellesi, Giovanni; Xu, Hesong

doi:10.1109/nssmic.2014.7431078

Cited by 5 publications

(2 citation statements)

References 13 publications

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“…In particular, the close proximity of the active edge to the sensor active area could cause early breakdown effects at voltages not high enough to ensure good charge collection efficiency. In general, the use of guard rings and field plates can allow for relatively high bias voltage, but at the expense of an increased dead area at the edge, so that a suitable design trade-off should be found [65,66].…”

Section: Jinst 10 C07010mentioning

confidence: 99%

Why and how pixels are becoming more and more “intelligent” (sensors—part 2)

Betta¹

2015

J. Inst.

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Although most of the pixel “intelligence” is normally found on the electronics side, some important progress has been recently achieved in radiation sensors themselves, allowing for significant performance improvement and new application opportunities. This paper is focused on the most interesting elements of novelty that have characterized pixel sensors in the past few years, with emphasis on device and technological aspects. In particular, sensors exploiting the third dimension in silicon (i.e., 3D sensors and active edge sensors) are reviewed in detail.

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Section: Jinst 10 C07010mentioning

confidence: 99%

Why and how pixels are becoming more and more “intelligent” (sensors—part 2)

Betta¹

2015

J. Inst.

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“…Active and slim-edge pixelated sensors offer the possibility to minimize these dead areas and thus to improve the quality of the acquired images [5,6]. A dedicated sensor design based on extensive TCAD simulations was developed within PixFEL project and a first sensor batch was designed and fabricated [7].…”

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confidence: 99%

First experimental results on active and slim-edge silicon sensors for XFEL

et al. 2016

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A: This work presents the first characterization results obtained on a pilot fabrication run of planar sensors, tailored for X-ray imaging applications at FELs, developed in the framework of INFN project PixFEL. Active and slim-edge p-on-n sensors are fabricated on n-type high-resistivity silicon with 450 µm thickness, bonded to a support wafer. Both diodes and pixelated sensors with a pitch of 110 µm are included in the design. Edge structures with different number of guard rings are designed to comply with the large bias voltage required by the application after accumulating an ionizing radiation dose as large as 1GGy. Preliminary results from the electrical characterization of the produced sensors, providing a first assessment of the proposed approach, are discussed. A functional characterization of the sensors with a pulsed infrared laser is also presented, demonstrating the validity of slim-edge configurations.

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