The ATLAS IBL CollaborationDuring the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and integrated luminosities realised following the shutdown. Because of the extreme radiation and collision rate environment, several new radiation-tolerant sensor and electronic technologies were utilised for this layer. This paper reports on the IBL construction and integration prior to its operation in the ATLAS detector.The ATLAS [1] general purpose detector is used for the study of proton-proton (pp) and heavy-ion collisions at the CERN Large Hadron Collider (LHC) [2]. It successfully collected data at pp collision energies of 7 and 8 TeV in the period of 2010-2012, known as Run 1. Following an LHC shutdown in 2013-2014 (LS1), it has collected data since 2015 at a pp collision energy of 13 TeV (the so-called Run 2).The ATLAS inner tracking detector (ID) [1, 3] provides charged particle tracking with high efficiency in the pseudorapidity 1 range of |η| < 2.5. With increasing radial distance from the interaction region, it consists of silicon pixel and micro-strip detectors, followed by a transition radiation tracker (TRT) detector, all surrounded by a superconducting solenoid providing a 2 T magnetic field.The original ATLAS pixel detector [4,5], referred to in this paper as the Pixel detector, was the innermost part of the ID during Run 1. It consists of three barrel layers (named the B-Layer, Layer 1 and Layer 2 with increasing radius) and three disks on each side of the interaction region, to guarantee at least three space points over the full tracking |η| range. It was designed to operate for the Phase-I period of the LHC, that is with a peak luminosity of 1 × 10 34 cm −2 s −1 and an integrated luminosity of approximately 340 fb −1 corresponding to a TID of up to 50 MRad 2 and a fluence of up to 1 × 10 15 n eq /cm 2 NIEL. However, for luminosities exceeding 2 × 10 34 cm −2 s −1 , which are now expected during the Phase-I operation, the read-out efficiency of the Pixel layers will deteriorate. This paper describes the construction and surface integration of an additional pixel layer, the Insertable B-Layer (IBL) [6], installed during the LS1 shutdown between the B-Layer and a new smaller radius beam pipe. The main motivations of the IBL were to maintain the full ID tracking performance and robustness during Phase-I operation, despite read-out bandwidth limitations of the Pixel layers (in particular the B-Layer) at the expected Phase-I peak luminosity, and accumulated radiation damage to the silicon sensors and front-end electronics. The IBL is designed to operate until the end of Phase-I, when a full tracker upgrade is planned [7] for high luminosity LHC (HL-LHC) operation from approximately ...

In this paper, we report on the radiation resistance of 50-micron thick Low Gain Avalanche Diodes (LGAD) manufactured at the Fondazione Bruno Kessler (FBK) employing different dopings in the gain layer.LGADs with a gain layer made of Boron, Boron lowdiffusion, Gallium, Carbonated Boron and Carbonated Gallium have been designed and successfully produced at FBK. These sensors have been exposed to neutron fluences up to φ n ∼ 3 · 10 16 n/cm 2 and to proton fluences up to φ p ∼ 9 · 10 15 p/cm 2 to test their radiation resistance. The experimental results show that Gallium-doped LGAD are more heavily affected by the initial acceptor removal mechanism than those doped with Boron, while the addition of Carbon reduces this effect both for Gallium and Boron doping. The Boron low-diffusion gain layer shows a higher radiation resistance than that of standard Boron implant, indicating a dependence of the initial acceptor removal mechanism upon the implant density.The LGAD design evolves the standard silicon sensors design by incorporating low, controlled gain [1] in the signal formation mechanism. The overarching idea is to manufacture silicon detectors with signals large enough to assure excellent timing performance while maintaining almost unchanged levels of noise [2].Charge multiplication in silicon sensors happens when the charge carriers (electrons and holes) are in electric fields of the order of E ∼ 300 kV/cm [3]. Under this condition, the electrons (and to less extent the holes) acquire sufficient kinetic energy to generate additional e/h pairs by impact ionization. Field values of ∼300 kV/cm can be obtained by implanting an appropriate acceptor (or donor) charge density ρ A (of the order ρ A ∼

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