Design and simulation of RF MEMS SPST shunt and SPDT shunt-shunt switches for X-band and Ku-band applications

Lenka, Manas Kumar; Sharma, Amit; Sharma, Jaibir; DasGupta, Amitava

doi:10.1117/12.925703

Cited by 1 publication

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“…MIM switch seems to provide more accurate high frequency characteristics when compared to the DOM switches. This can be seen in the comparison with the DOM switches reported in [20]. The theoretical capacitance ratio of the device reported in [20] is 151, whereas the capacitance ratio obtained after characterization is 10.…”

Section: Design Flexibilitysupporting

confidence: 51%

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Novel RF MEMS capacitive switches with design flexibility for multi-frequency operation

Gopalakrishnan

DasGupta

Nair

2017

J. Micromech. Microeng.

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RF MEMS capacitive shunt switches with a dielectric-on-metal (DOM) capacitor, which are widely used for microwave applications in the communication field, suffer from some serious drawbacks. A significant shift is observed in the resonant frequency of these switches due to the reduction in the down-state capacitance caused by the surface roughness of the dielectric layer. In order to achieve accurate down-state capacitance, a thin layer of floating metal is deposited on the dielectric layer converting the DOM switch to a metal-insulator metal (MIM) switch. The MIM switch opens up interesting possibilities in the design, such as achieving flexibility in the operating frequency of the switch. This paper reports a novel method to achieve design flexibility for multi-frequency operation in switches, by effectively utilizing the equipotential nature of the floating metal in the MIM capacitor. Unlike in a DOM switch, the resonant frequency can be varied by changing merely the length of the floating metal, without having to make any other structural modifications. This enables to have switches operating at different frequency on the same wafer. The beams of the switches are also designed in such a way as to provide stress resilience, thereby preventing buckling. This paper presents the design, simulation, fabrication and characterization of a switch that operates in the X-band. The fabricated switches show excellent stress resilience. The characterized switch demonstrates a reduction in the resonant frequency in proportion to an increase in the length of the floating metal, hence validating the design flexibility proposed in this paper.

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Section: Design Flexibilitysupporting

confidence: 51%

“…This can be seen in the comparison with the DOM switches reported in [20]. The theoretical capacitance ratio of the device reported in [20] is 151, whereas the capacitance ratio obtained after characterization is 10. This is majorly due to the reduction in C d , and it influences the isolation as well.…”

Section: Design Flexibilitysupporting

confidence: 51%