Design and simulation equivalent model of Floating Gate Transistor

Abstract

The [rrst Floating Gate Transistor (metal insulator-metal-insulator structure) was proposed by Kahng and Sze in 1967 [I]. Using the floating gate voltage value, capacitive coupling coefficients can be found out at different bias conditions as required. Once these have been found out for a particular technology, the values of the capacitances can be found out and implemented in the given model. The charge present on the gate has to be calculated using the transient models of hot electron programming and Fowler nordheim tunn eling. These can be incorporated and thus the model can be extended to the transient conditions as weU. The SPICE equivalent model is designed and Curr ent Voltage characteristics and Transfer characteristics are comparatively analyzed.

Simulations of Ultralow-Power Nonvolatile Cells for Random-Access Memory

“…where CFG is the capacitance between the CG and FG (calculated from a parallel plate approximation as 1.2 μFcm -2 for our devices), and QFG is the charge stored in the FG [14]. Note that as both QFG and CFG are directly proportional to cross sectional area, it is eliminated from the above equation.…”