Design and research on large displacement bidirectional MEMS stage with interlock mechanism

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MEMS switch is a movable device manufactured by means of semiconductor technology, possessing many incomparable advantages such as a small volume, low power consumption, high integration, etc. This paper reviews recent research of MEMS switches, pointing out the important performance indexes and systematically summarizing the classification according to driving principles. Then, a comparative study of current MEMS switches stressing their strengths and drawbacks is presented, based on performance requirements such as driven voltage, power consumption, and reliability. The efforts of teams to optimize MEMS switches are introduced and the applications of switches with different driving principles are also briefly reviewed. Furthermore, the development trend of MEMS switch and the research gaps are discussed. Finally, a summary and forecast about MEMS switches is given with the aim of providing a reference for future research in this domain.

Section: Classification Of Mems Switches Based On Driving Principlmentioning

confidence: 99%

Research Status and Development Trend of MEMS Switches: A Review

Cao

Zhao

2020

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“…To enhance the reliability during the electromagnetic interference, a unique mechanical encryption system has been integrated into the SAD. Different from our previous researches [11], the chip could only be disarmed through a unique amplitude sequence of the input voltage; otherwise, it will be stuck or locked down by the interlock mechanism.…”

Section: Introductionmentioning

confidence: 89%

Research on an On-Chip MEMS Based Safety and Arming Device with a Mechanical Encryption System

Fang

Zhang

et al. 2019

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The design and characterization of microelectromechanical systems (MEMS) based on-chip SAD (Safety and Arming Device) are proposed. An encryption system has been integrated into the device to enhance its reliability during the electromagnetic interference. The conversion between safe status and arm status is reversible due to the bidirectional actuation design of the slider and pawl on the SOI (Silicon on Insulator) chip, being driven by the chevron electrothermal actuators. The width of each tooth on the slider, which contains coding information, is different from that of its adjacent neighbor. Additionally, the different teeth width, respectively 32 μm, 82 μm, requiring different decoding displacement of 100 μm and 150 μm, corresponds to the different decoding voltage of 13.5 V and 14.8 V. The travel range of interrupter in the SAD will only be limited by the chip dimension and be able to cover the motion of ±1 mm in the present research, due to the capability of motion retention. Finally, the SAD is integrated with a copper azide exploding chip to measure the average velocity of the titanium flyer for the application feasibility validation.

“…An electro-thermal principle is applied to guarantee a sufficient output force and output displacement. Based on our previous research [18], the metal enhanced layer is added, and the MEMS stage in our early study has been modified into the MEMS S&A device. The metal/silicon composite slider is set in the center of the chip, and four pawl actuators are designed around the slider.…”

Section: The Hybrid Processmentioning

confidence: 99%

The Hybrid Fabrication Process of Metal/Silicon Composite Structure for MEMS S&A Device

Fang

Zhang

et al. 2019

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The micro-electromechanical system (MEMS) safety-and-arming (S&A) device has the features of integration and miniaturization, which is one of the important directions of weapon development. Confined by the fabrication process, the silicon-based devices are too fragile, and the metal-based devices are low precision. In order to solve the contradiction between high precision and high structure strength, a metal/silicon composite structure is proposed in this paper, and a hybrid fabrication process is introduced. This new method mainly consists of metal sputtering, electroplating, and (inductively–coupled-plasma) ICP etching. As the resolution of the thick dry film is limited, the process of a femtosecond laser is applied to refine the structure, and the Ni plate (a block of 1 mm × 3 mm × 0.3 mm with a cavity of ϕ 0.85 mm × 0.3 mm in the center) is fabricated on the silicon-on-insulator (SOI) wafer successfully. After the double sides are etched by ICP, the SOI wafer is immersed in a buffered-oxide-etch (BOE) etchant to remove the buried layer. The cover plate acts as the encapsulation and is bonded with the SOI wafer by the epoxy glue. Then, the temporary support beam of the device is broken by the probe, and the suspended composite structure can be fully released. The hybrid process is the integration of the silicon-based process and the metal-based process, which can combine the advantages of both high precision and a high structure strength. The process proposed here is suitable for the application of weapon miniaturization.