2011
DOI: 10.1109/tmtt.2010.2090417
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Design and Performance of a 600–720-GHz Sideband-Separating Receiver Using ${\hbox{AlO}}_{x}$ and AlN SIS Junctions

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Cited by 18 publications
(11 citation statements)
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“…The AlO x barrier SIS devices are fabricated on a 200 µm thick quartz substrate Mena et al 2011;Zijlstra et al 2007). First, a sacrificial Nb monitor layer is deposited, followed by an optically defined trilayer of Nb/Al/AlO x /Nb.…”
Section: Sis Device Fabricationmentioning
confidence: 99%
See 1 more Smart Citation
“…The AlO x barrier SIS devices are fabricated on a 200 µm thick quartz substrate Mena et al 2011;Zijlstra et al 2007). First, a sacrificial Nb monitor layer is deposited, followed by an optically defined trilayer of Nb/Al/AlO x /Nb.…”
Section: Sis Device Fabricationmentioning
confidence: 99%
“…Having only one IF channel per polarization, the IF system of Band 9 was designed to cover a range of 4-12 GHz instead of 4-8 GHz as in the 2SB bands. Improvements in micromachining techniques over the past few years now allow fabrication of 2SB receivers for these high frequencies as well (Mena et al 2011), and so they can be considered for future upgrading of the Band 9 receivers Khudchenko et al 2011Khudchenko et al , 2012.…”
Section: Introductionmentioning
confidence: 99%
“…2 the proposed low VSWR topology is shown with the IF LNA's included in the IF IQpaths. Using a similar convention as [5], the ideal process of subharmonic down conversion from the RF port to the IF I and Q ports can be described by expressing the downconverted IF voltages v IF,I and v IF,Q at the respective I and Q ports:…”
Section: A Sideband Separating Topologymentioning
confidence: 99%
“…Recent improvements in semiconductor fabrication, circuit processing and high precision machining technology, has led to an increased repeatability and enhanced component performance and made it possible to make integrated sideband separating THz receivers. With the rapid development of novel micromachining techniques, the performance of these systems is constantly improving and state-of-the-art superconductorisolator-superconductor (SIS) and hot electron bolometer (HEB), 2SB and balanced receivers [4][5][6], can now be found operating at frequencies around 1 THz. However, the development of integrated 2SB heterodyne receiver topologies has so far been exclusively done for cryogenic applications, leading to a technological gap for room temperature Schottky diode based applications.…”
Section: Introductionmentioning
confidence: 99%
“…Alternatively, the RF filters and mixers can also be replaced by a sideband separating mixer configuration. 29 A single high frequency local oscillator is used to avoid the use of harmonic mixers with high conversion loss. Subject to the application, an attenuated signal of the gyrotron source for ECRH could be used as a LO.…”
Section: Front-end Setupmentioning
confidence: 99%