Design and performance of a 4 in. electron image projector

Ward, R. H.; Franklin, A. R.; Gould, Phillip L.; Plummer, Matthew

doi:10.1116/1.571201

Cited by 11 publications

(2 citation statements)

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“…However, the high cost and low wafer throughput of serial direct-write equipment are also restrictive disadvantages [I]. Previously developed parallel-write lithographic approaches [2] have problems with either the transmission mask or the wide-area electron source.…”

Section: Introductionmentioning

confidence: 99%

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Lithographic processing of polymers using plasma-generated electron beams

Krishnaswamy²,

Zhang³

et al. 1990

IEEE Trans. Plasma Sci.

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Abstract-Pattern definition in polymer films is achieved using electron beams generated in soft vacuum (0.05-0.50 torr) glow discharges either on a continuous or pulsed (20-100 ns) basis. With the continuous-mode electron beam, 7-!lm transmission mask features are replicated in both polymethyl methacrylate (PMMA) and polyimide resists. Using a pulsed electron-beam submicron ( -0.5 um) features are transferred from an electron-transmitting stencil mask into the PMMA. The soft-vacuum pulsed electron beam is also eminently suited for polymer stabilization. Pulsed electron-beam hardening of 0.05-3.5-!lm-thick AZ-type and MacDermid resist patterns is also demonstrated with hardened resist patterns stable to temperatures between 200°and 350°C. The demonstrated replication and pattern stabilization technique may be applicable in microelectronics packaging lithography where the resist thickness is substantial, Iinewidths are 1-10 urn, and registration requirements are less stringent.

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Section: Introductionmentioning

confidence: 99%

“…1,2 The soft-vacuum processes described herein depart sharply from conventional techniques [1]- [3] in the following ways:…”

Section: Introductionmentioning

confidence: 99%

Lithographic processing of polymers using plasma-generated electron beams

Krishnaswamy²,

Zhang³

et al. 1990

IEEE Trans. Plasma Sci.

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A dry‐etch resistant positive‐working electron resist

Roberts¹

1983

Polymer Engineering & Sci

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This paper describes two types of cross-linked positive-working electron resists. The first is based upon phenol-formaldehyde resins crosslinked to poly-(methyl methacrylate) by phenolic ester groups. The second type is based upon polystyrene, crosslinked by carboxylic acid anhydride groups. The resist properties can be varied by changing the proportion of crosslinks. A version of the second type which contains about 95 percent styrene units is described. This material shows very good resistance to degradation in a plasma-etching process for preparing chromium on glass masks, even when it is used as a very thin film.

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Forming Electron Beams of Submicron Cross Section

Valiev

1992

The Physics of Submicron Lithography

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Design and performance of a 4 in. electron image projector

Cited by 11 publications

References 0 publications

Lithographic processing of polymers using plasma-generated electron beams

Lithographic processing of polymers using plasma-generated electron beams

A dry‐etch resistant positive‐working electron resist

Forming Electron Beams of Submicron Cross Section

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