Design and performance analysis of single biasing based SPDT switch for wireless data communications

Misran, Mohamad Harris; Shairi, N. A.; Said, Maizatul Alice Meor

doi:10.1109/apace.2012.6457695

Cited by 6 publications

(4 citation statements)

References 7 publications

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“…For the proposed switch parameters as listed in Table 1, actuation voltage turns out to be 1.7 V. However, on measurements in open environment, actuation voltage turns out to be 5 V due to bridge damping and friction between hinges and clamps which is much less than actuation voltage reported in the literature [3][4][5][6][7][8][9][10][11][12][13][14][15]. Comparisons for size, pull-in voltage, switching time, and number of switches utilized in the present SPDT switch are described in Table 2.…”

Section: Actuation Voltagementioning

confidence: 86%

“…In the ON state, overlap capacitance is 2.01 pF and parasitics have a negligible effect on it. Insertion loss lies in the range of −0.3 dB to −0.6 dB for a wide bandwidth of 19 (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) GHz. Isolation varies from −28.1 dB (@1 GHz) to −20 dB (@20 GHz) as shown in Figure 7.…”

Section: Electromagnetic Analysismentioning

confidence: 99%

“…The RF MEMS devices are known to be better compared to solid state devices due to their low power consumption, high isolation, and low insertion loss. RF MEMS SPDT switches constitute the basic building block of the RF MEMS systems like SP4T [1], phase shifter [2], switch matrix [3], other communication systems [4], and so forth. The RF MEMS devices are also known to have few drawbacks too, for example, low switching speed (20-200 sec), high pull-in voltage (15-80 V), larger size, and reliability [5,6].…”

Section: Introductionmentioning

confidence: 99%

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Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

Bansal

Bajpai

Kumar

et al. 2016

Journal of Electrical and Computer Engineering

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RF MEMS devices are known to be superior to their solid state counterparts in terms of power consumption and electromagnetic response. Major limitations of MEMS devices are their low switching speed, high actuation voltage, larger size, and reliability. In the present paper, a see-saw single pole double throw (SPDT) RF MEMS switch based on anchor-free mechanism is proposed which eliminates the above-mentioned disadvantages. The proposed switch has a switching time of 394 nsec with actuation voltage of 5 V. Size of the SPDT switch is reduced by utilizing a single series capacitive switch compared to conventional switches with capacitive and series combinations. Reliability of the switch is improved by adding floating metal and reducing stiction between the actuating bridge and transmission line. Insertion loss and isolation are better than −0.6 dB and −20 dB, respectively, for 1 GHz to 20 GHz applications.

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Section: Actuation Voltagementioning

confidence: 86%

Section: Electromagnetic Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

Bansal

Bajpai

Kumar

et al. 2016

Journal of Electrical and Computer Engineering

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“…Figure 4 is the detailed topology of SPDT switch. In order to get ultra-wideband insertion loss and isolation, a series-shunt PIN diode is the most chosen configuration by researchers/designers [10][11][12][13][14][15][16]. Then, by adding more shunt diodes (Dna and Dnb), isolation can be increased by a maximum of 6 dB for each additional PIN diode [13].…”

Section: Uwb Rf Switch Designmentioning

confidence: 99%

Performance analysis of Ultra-wideband RF switch using discrete PIN diode in SC-79 package for medical application of microwave imaging

Shairi¹,

Sanusi²,

Othman³

et al. 2019

IJECE

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<span>Microwave imaging is an emerging technology in the medical application which have similar functions as X-ray, Magnetic Resonance Imaging (MRI), and Computed Tomography scan (CT scan). In designing a microwave imaging system for medical application, it can use a monostatic radar approach by transmitting a Gaussian pulse (with an ultra-wideband (UWB) frequency). In this system, eight antennas are required with the support of RF switches. Thus, it is important to get the best performance of UWB RF switch in this application. Therefore, this paper presents the performance analysis of four different RF switch topologies (Design 1, 2, 3 and 4) using discrete PIN diode in SC-79 package. The design was based on single pole double throw (SPDT) switch. As result, Design 2 is the best topology after considering the tradeoff between isolation and return loss performances. Based on the three cascaded SPDT switches of Design 2, the insertion loss was less than -2 dB and return loss was more than -10 dB. Meanwhile, the isolation bandwidth (at the minimum isolation of -20 dB) was from 0.5 to 3.7 GHz (with 3.2 GHz bandwidth), hence, it could be used in the UWB frequency for medical application of microwave imaging.</span>

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