Design and Performance Analysis of Depletion-Mode InSb Quantum-Well Field-Effect Transistor for Logic Applications

Abstract

Abstract:The design of a 1 m gate length depletion-mode InSb quantum-well field-effect transistor (QWFET) with a 10 nm-thick Al 2 O 3 gate dielectric has been optimized using a quantum S/mm and a drain current density of more than 6.04 A/mm. A short-circuit current-gain cut-off frequency (f T ) of 374 GHz and a maximum oscillation frequency (f max ) of 645 GHz are predicted for the device. These characteristics make the device a potential candidate for low power, highspeed logic electronic device applications.