Design and optimization of non-volatile memory based on Memristor System

Hemmati, Mohammadreza; Dolatshahi, Mehdi; Zanjani, S. Mohammadali

doi:10.1109/iccke50421.2020.9303681

2020 10th International Conference on Computer and Knowledge Engineering (ICCKE) 2020

DOI: 10.1109/iccke50421.2020.9303681

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Design and optimization of non-volatile memory based on Memristor System

Mohammadreza Hemmati

Mehdi Dolatshahi

S. Mohammadali Zanjani

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2022

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“…In a memristor, the resistance depends on voltage, frequency, voltage polarity, and excitation period [31,32]. Memristors have low power consumption, high switching speed, high packing density, and high data storage stability (non-volatility).…”

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confidence: 99%

A novel design of high performance and robust ultra-low power SRAM cell based on memcapacitor

Abbasi¹,

Setoudeh²,

Tavakoli³

et al. 2022

Nanotechnology

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The present paper proposes a six-FinFET two-memcapacitor (6T2MC) non-volatile static random-access memory (NVSRAM). In this design, the two memcapacitors are used as non-volatile memory elements. The proposed cell is flexible against data loss when turned off and offers significant improvement in read and write operations compared to previous NVSRAMs. The performance of the new NVSRAM design is evaluated in terms of read and write operation at particular nanometric feature sizes. Moreover, the proposed 6T2MC cell is compared with 8T2R, 8T1R, 7T1R, and 7T2R cells. The results show that 6T2MC has a 5.50% lower write delay and 98.35% lower read delay compared to 7T2R and 7T1R cells, respectively. The 6T2MC cell exhibits 38.86% lower power consumption and 23.80% lower leakage power than 7T2R and 7T1R cells. The proposed cell is significantly improved in terms of HSNM, RSNM, and WSNM compared to 8T2R, 8T1R, 7T2R, and 7T1R cells, respectively. Important cell parameters, such as power consumption, data read/write delay, and SNM, are significantly improved. The superior characteristics of FinFET over MOSFET and the combination of this technology with memcapacitors lead to significant improvement in the proposed design.

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mentioning

confidence: 99%

A novel design of high performance and robust ultra-low power SRAM cell based on memcapacitor

Abbasi¹,

Setoudeh²,

Tavakoli³

et al. 2022

Nanotechnology

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Design and optimization of non-volatile memory based on Memristor System

Cited by 1 publication

References 12 publications

A novel design of high performance and robust ultra-low power SRAM cell based on memcapacitor

A novel design of high performance and robust ultra-low power SRAM cell based on memcapacitor

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