Design and optimization of a gate-controlled dual direction electro-static discharge device for an industry-level fluorescent optical fiber temperature sensor

Yang, Weijia; Jin, Xiangliang; Yang, Jian; Feng, Yan; Liu, Yujie; Peng, Yan; Luo, Jun; Yang, Jun

doi:10.1631/fitee.2000504

Cited by 4 publications

(1 citation statement)

References 16 publications

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“…As a result, the anode polysilicon gate generates a vertical downward electric field, facilitating the transport of carriers between the N-Well (1) region and the P-Sub region. Simultaneously, the cathode polysilicon gate generates a vertical upward electric field, promoting the transport of carriers between the P-Sub region and the N-Well (2) region [23]. The dual-gate controlled mechanism in the GDTDDSCR structure combines the advantages of the two aforementioned devices.…”

Section: Structure Of the Gdtddscrmentioning

confidence: 99%

Dual-directional SCR device with dual-gate controlled mechanism for ESD protection in photoelectric chip

Liu,

Wang,

Yang

et al. 2024

Semicond. Sci. Technol.

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The dual-directional silicon-controlled rectifier (DDSCR) is an electrostatic discharge (ESD) protection device. It can provide positive and negative ESD surge paths and has excellent robustness. However, industry-level sensors operating in strong electromagnetic interference environments impose higher reliability requirements on photoelectric chips. This paper proposed a novel DDSCR with a dual-gate controlled mechanism. By incorporating the gate diode triggering and the gate field modulation mechanism into the traditional DDSCR, and further utilizing additional parasitic PNP transistors for diversion, the proposed device exhibits significantly improved ESD characteristics. Measurement results indicate that, compared to DDSCR, the proposed device exhibits a 27.5% reduction in trigger voltage (Vt1), a 96.1% improvement in holding voltage (Vh), and achieves an equivalent Human Body Model (HBM) protection level of 11.45 kV, demonstrating exceptional design area efficiency. The experimental findings validate the effectiveness of the proposed device in 5 V photoelectric chip applications.

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Section: Structure Of the Gdtddscrmentioning

confidence: 99%

Dual-directional SCR device with dual-gate controlled mechanism for ESD protection in photoelectric chip

Liu,

Wang,

Yang

et al. 2024

Semicond. Sci. Technol.

Self Cite

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Characteristic parameter model and circuit‐level simulation of gate‐controlled dual direction SCR for on‐chip ESD protection

Liu,

Wang,

Yang

et al. 2024

Circuit Theory & Apps

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SummaryDual‐directional SCR (DDSCR) with bidirectional discharge paths and high robustness is widely employed for electrostatic discharge (ESD) protection in integrated circuits. However, the design and simulation of on‐chip ESD protection circuits for dual‐directional paths remain challenging due to a lack of relevant device models. This paper designs a Gate‐Controlled Dual‐Direction SCR (GDDSCR) for providing electrostatic discharge (ESD) protection in industry‐level temperature sensors. Furthermore, a new behavioral model is developed based on the GDDSCR for simulating ESD protection circuits along both forward and reverse paths. Experimental results demonstrate that the GDDSCR behavioral model accurately reproduces the IV characteristics observed in bidirectional transmission line pulse (TLP) tests. In addition, the equivalent circuit based on human body model (HBM) is used for transient simulation, and the accuracy of the model is verified by relevant HBM experiments. The proposed model allows the direct extraction of parameters such as trigger voltage (Vt1), holding voltage (Vh), and on‐state resistance (Ron) through TLP testing, facilitating easy application to other types of DDSCR devices.

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Research on Hydrogen Gas Sensing Mechanism of Micro and Nano Ionization Sensor

Zhang,

Qiu,

Zhang

et al. 2024

2024 4th International Conference on Electronic Materials and Information Engineering (EMIE)

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Design and optimization of a gate-controlled dual direction electro-static discharge device for an industry-level fluorescent optical fiber temperature sensor

Cited by 4 publications

References 16 publications

Dual-directional SCR device with dual-gate controlled mechanism for ESD protection in photoelectric chip

Dual-directional SCR device with dual-gate controlled mechanism for ESD protection in photoelectric chip

Characteristic parameter model and circuit‐level simulation of gate‐controlled dual direction SCR for on‐chip ESD protection

Research on Hydrogen Gas Sensing Mechanism of Micro and Nano Ionization Sensor

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