Design and measurements of a 28 GHz High-Linearity LNA in 45nm SOI-CMOS

Lammert, Vincent; Sakalas, P.; Werthof, A.; Weigel, Robert; Issakov, Vadim

doi:10.1109/comcas52219.2021.9629091

Cited by 4 publications

(3 citation statements)

References 14 publications

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“…The gain and NF of the LNA are depicted in Figure 8c,d The performance of the proposed LNA is compared with recent publications in Table 2, Refs. [7][8][9][10]. Only differential LNAs are considered.…”

Section: Simulation Results and Comparativementioning

confidence: 99%

“…Nevertheless, the LNA operates in a narrow bandwidth of 2 GHz. A very compact (0.11 mm 2 ) 45 nm RFSOI 28-GHz LNA is introduced in [9] , based on a source degenerated cascode with integrated baluns. The circuit achieves a gain of 9 dB, a NF of 3.1 dB, and very high linearity (IIP3 = 10 dBm), over a bandwidth of 4.5 GHz, with a total power consumption of 34 mW from a 1.8 V DC power supply.…”

Section: Simulation Results and Comparativementioning

confidence: 99%

“…As a result, it reduces the area of the integrated circuit and, therefore, its manufacturing costs. Numerous works available in the scientific literature introduce differential LNAs to facilitate system-on-chip integration since they provide high resilience to power supply and common-mode noise [7][8][9][10]. However, in differential circuits, the number of components and the power consumption are doubled.…”

Section: Introductionmentioning

confidence: 99%

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A 0.38 V Fully Differential K-Band LNA with Transformer-Based Matching Networks

et al. 2023

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The implementation of a 0.38 V K-band low-power fully differential low-noise amplifier (LNA) in a 45 nm silicon-on-insulator (SOI) process is presented. The proposed architecture employs a two-stage approach with transformer-based interstage matching networks to minimize circuit area. The proposed LNA covers the frequency range from 20.3 to 24.1 GHz, it achieves a noise figure (NF) as low as 2.2 dB, and a gain of 12.9 dB, with a power consumption of 11.7 mW from a 0.38 V DC supply in a very compact area (0.15 mm2) excluding pads. Non-linearity simulations show the proposed circuit achieves a Po1dB of −7.3 dBm, and an OIP3 (Output Third Order Intercept) of 7 dBm. The transformers allow improved area use since they are simultaneously used as matching networks, RF chokes to bias the active devices, baluns at the input and output terminals to convert the single-ended signal into differential mode, and vice versa, and facilitates the interconnection with the upcoming stages. We used a state-of-the-art tool that generates the desired inductances to perform impedance matching for a given frequency and coupling factor value. A comparison with similar works proves the proposed LNA achieves a very low NF and the lowest power consumption reported in a differential circuit.

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Section: Simulation Results and Comparativementioning

confidence: 99%

Section: Simulation Results and Comparativementioning

confidence: 99%