Design and Implementation of High-density Isolated Bi-directional Soft-switching Resonant DC-DC Converter with Partial Power Processing

Cao, Yuliang; Ngo, Minh; Yan, Ning; Bai, Yang; Dong, Dong; Burgos, Rolando; Agirman, I.

doi:10.1109/apec42165.2021.9487457

Cited by 23 publications

(3 citation statements)

References 14 publications

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“…For example, the I-V sweep cannot measure the device BV DYN in hard switching, in which high current and high voltage are applied concurrently. Besides, as compared to the converter operations, [76][77][78] the highest dv/dt provided by the pulse I-V measurement system is much lower. This gap may lead to a difference in BV DYN measured in the pulse I-V sweep and practical converters, e.g.…”

Section: Static and Pulse I-v Sweepmentioning

confidence: 99%

“…Therefore, the reported f sw in repetitive UIS or CIS tests is usually only several kHz 86,91,93) up to a maximum of 100 kHz, 84,92) which is below the f sw in many applications (hundreds of kHz). 76,77,94) To perform a high-frequency overvoltage test, an active clamping circuit (ACC) test is demonstrated. 95) The test circuit is illustrated in Fig.…”

Section: Circuit-based Measurementmentioning

confidence: 99%

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Power device breakdown mechanism and characterization: review and perspective

Zhang

2023

Jpn. J. Appl. Phys.

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Breakdown voltage (BV) is arguably one of the most critical parameters for power devices. While avalanche breakdown is prevailing in silicon and silicon carbide devices, it is lacking in many wide bandgap (WBG) and ultra-wide bandgap (UWBG) devices, such as the gallium nitride high electron mobility transistor, due to the deployment of junction-less device structures or the inherent material challenges of forming p-n junctions. This paper starts with a survey of avalanche and non-avalanche breakdown mechanisms, followed by the distinction between the static and dynamic BV. Various BV characterization methods, including the static and pulse I-V sweep, unclamped and clamped inductive switching, as well as continuous overvoltage switching, are comparatively introduced. The device physics behind the time- and frequency-dependent BV as well as the enabling device structures for avalanche breakdown are also discussed. The paper concludes by identifying research gaps for understanding the breakdown of WBG and UWBG power devices.

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Section: Static and Pulse I-v Sweepmentioning

confidence: 99%

Section: Circuit-based Measurementmentioning

confidence: 99%

Power device breakdown mechanism and characterization: review and perspective

Zhang

2023

Jpn. J. Appl. Phys.

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“…Intensive studies for high-power-density converters have been conducted and the impact of the SiC (Silicon Carbide) and GaN (Gallium Nitride) ultra-low loss semiconductor power devices on the converter power density have been reported ( 9)- (15) . However, the relation between the conversion efficiency and the output power density of the isolated dc-dc converters is now becoming stagnant around 10 W/cm 3 with the peak efficiency of 99% (3) .…”

Section: Dc-dc Power Electronic Transformer For Low-voltage DC Distri...mentioning

confidence: 99%

99%, 15W/cm<sup>3</sup> Capacitively Coupled Modular DCPET for Low-Voltage DC Power Supply Systems

2023

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A capacitively coupled modular DC-DC power electronic transformer (DCPET) has been proposed. The proposed DCPET consists of capacitively coupled unregulated LLC resonant converter modules; these modules are connected in series-parallel combinations. The capacitive coupling topology is considered to be promising to develop highly efficient high-power-density converter modules, and the series-parallel connection of these modules smoothly achieves various voltage ratios of DCPETs. A trial design for a 48 V-48 V, 450 W capacitively coupled LLC converter module using GaN-FETs has been demonstrated, and the potential to achieve 99%, 15 W/cm 3 has been confirmed. Moreover, the 48 V-384 V DCPET using eight 98.8%, 15 W/cm 3 converter modules has been demonstrated, and the feasibility of the proposed topology has been verified. The proposed DCPET overcomes the stagnant relationship between the efficiency and the output power density of isolated converters, and the proposed topology contributes to the prevalence of power electronics equipment for the economical use of electric power.

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