Design and Implementation of an Active EMI Filter for Common-Mode Noise Reduction

Lee, Kuk-Hee; Kang, Byeong-Geuk; Choi, Yeung Joon; Chung, Se-Kyo; Won, Jae-Sun; Kim, Hee–Seung

doi:10.6113/jpe.2016.16.3.1236

Cited by 4 publications

(1 citation statement)

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“…To reduce the submissive EMI filter volume is a big task for the power generator designers [90]. Active EMI filters (AEF) in this context display great promise in minimizing the volume of the passive component (with reductions higher than 50%) in power converters [91][92][93]. In [94], the authors provided an overview of several works in the area of AEFs and their implementations for different power converters in the past three decades.…”

Section: Merits and Challenges Of Using Wbg Semiconductor Devicesmentioning

confidence: 99%

Wide Band Gap Devices and Their Application in Power Electronics

et al. 2022

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Power electronic systems have a great impact on modern society. Their applications target a more sustainable future by minimizing the negative impacts of industrialization on the environment, such as global warming effects and greenhouse gas emission. Power devices based on wide band gap (WBG) material have the potential to deliver a paradigm shift in regard to energy efficiency and working with respect to the devices based on mature silicon (Si). Gallium nitride (GaN) and silicon carbide (SiC) have been treated as one of the most promising WBG materials that allow the performance limits of matured Si switching devices to be significantly exceeded. WBG-based power devices enable fast switching with lower power losses at higher switching frequency and hence, allow the development of high power density and high efficiency power converters. This paper reviews popular SiC and GaN power devices, discusses the associated merits and challenges, and finally their applications in power electronics.

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