2013
DOI: 10.1109/tpel.2012.2203151
|View full text |Cite
|
Sign up to set email alerts
|

Design and Implementation of a Highly Efficient Three-Level T-Type Converter for Low-Voltage Applications

Abstract: The demand for lightweight converters with high control performance and low acoustic noise led to an increase in switching frequencies of hard switched two-level low-voltage 3-phase converters over the last years. For high switching frequencies, converter efficiency suffers and can be kept high only by employing cost intensive switch technology such as SiC diodes or CoolMOS switches; therefore, conventional IGBT technology still prevails. In this paper, the alternative of using three-level converters for lowvo… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
295
0
4

Year Published

2013
2013
2021
2021

Publication Types

Select...
5
3

Relationship

0
8

Authors

Journals

citations
Cited by 848 publications
(324 citation statements)
references
References 20 publications
(20 reference statements)
0
295
0
4
Order By: Relevance
“…T J,max = 125 • C. This strategy not only guarantees optimal semiconductor material usage, but also provides a common basis for comparisons [8], [10]- [11]. The considered power semiconductors are latest generation Trench and Field-Stop 1200 V and 1700 V silicon IGBT4 and 3300 V silicon IGBT2 devices from Infineon that are rated for a maximum junction temperature of 150 • C. The devices are presented in Table IV.…”
Section: Semiconductors Selection and Power Losses Calculationmentioning
confidence: 99%
See 1 more Smart Citation
“…T J,max = 125 • C. This strategy not only guarantees optimal semiconductor material usage, but also provides a common basis for comparisons [8], [10]- [11]. The considered power semiconductors are latest generation Trench and Field-Stop 1200 V and 1700 V silicon IGBT4 and 3300 V silicon IGBT2 devices from Infineon that are rated for a maximum junction temperature of 150 • C. The devices are presented in Table IV.…”
Section: Semiconductors Selection and Power Losses Calculationmentioning
confidence: 99%
“…1 (c). Although the T-Type does not present reduced voltage over its semiconductors, in recent years the research has shown high performance of this structure [7], [8]. For that reason, the T-Type converter is also evaluated in this paper.…”
Section: Introductionmentioning
confidence: 99%
“…This topology is favourable because of using common dc-links compared to an hybrid multilevel converter and did not need for pre-charging operation as flying-capacitor converter type. In [3], a T-type converter introduced and proved to be a good three-level topology for low voltage applications. In this paper, a dual-T-type converter is used as a five-level converter to drive an open-end winding induction machine.…”
Section: Proposed Multilevel Invertermentioning
confidence: 99%
“…In [2], the cascaded H-bridge converter is introduced operating as a single-phase inverter and if applied to three-phase system, it will need more separated dc-power supplies. In [3], the T-type converter is introduced as a new topology suitable for low-voltage applications and this converter is proved to be a suitable ac-drive because of lower converter losses compared to three-level neutral-point-clamped (NPC) converter. In this paper, a dual-T-type converter is used to drive an open-end-winding induction machine (OEWIM).…”
Section: Introductionmentioning
confidence: 99%
“…The three-level T-Type converter (3LTTC) and the three-level neutral point clamped converter (3LNPCC) have been reported to offer efficiency gains of 1-2% over the two-level converter (2LC) with Si devices [4]. Therefore this paper seeks to examine the performance of the 2LC, 3LNPCC and the 3LTTC when using SiC technology for typical MEA applications.…”
Section: Introductionmentioning
confidence: 99%