Abstract:There is a growing need for highly efficient, power dense DC-AC converters to support a number of future more electric aircraft technologies. SiC has been identified as a potential technology to improve the efficiency of these converters. To analyse the semiconductor losses, this paper presents the semiconductor loss equations for the two-level converter (2LC), three-level neutral point clamped converter (3LNPCC) and the three-level T-Type converter (3LTTC). Based on the equations and current datasheet informa… Show more
“…In recent years there have been several attempts to realise the frequency multiplication method in the field of power electronics inverters [3][4][5][6][7][8][9][10][11][12][13][14][15], on the assumption that it would allow the generation of cleaner signals, i.e. with relatively low THD values.…”
In this study, an innovative realisation of a heterodyne multiplier is proposed, in the field of power inverters, as an alternative to existing systems in the literature. It is shown that by proper choice of control signals, it is possible to reduce the number of components by a factor of three at least, as compared to existing applications. Additionally, it is possible to considerably reduce the amplitude of harmonics in the switching frequency. As a result, considerable improvement in frequency multiplier efficiency is seen, without detriment to the low total harmonic distortion (THD) achievable by the use of frequency multipliers. The advantages of this method have been shown in AC-AC converters as well as DC-AC converters. Finally, a 4.2-kW model was built with an efficiency of 98.7% and a THD of <2.2%.
“…In recent years there have been several attempts to realise the frequency multiplication method in the field of power electronics inverters [3][4][5][6][7][8][9][10][11][12][13][14][15], on the assumption that it would allow the generation of cleaner signals, i.e. with relatively low THD values.…”
In this study, an innovative realisation of a heterodyne multiplier is proposed, in the field of power inverters, as an alternative to existing systems in the literature. It is shown that by proper choice of control signals, it is possible to reduce the number of components by a factor of three at least, as compared to existing applications. Additionally, it is possible to considerably reduce the amplitude of harmonics in the switching frequency. As a result, considerable improvement in frequency multiplier efficiency is seen, without detriment to the low total harmonic distortion (THD) achievable by the use of frequency multipliers. The advantages of this method have been shown in AC-AC converters as well as DC-AC converters. Finally, a 4.2-kW model was built with an efficiency of 98.7% and a THD of <2.2%.
“…For high performance drive systems, the switching device needs to be selected based on its performance given the targeted operating conditions. SiC MOSFET technology is chosen for its reduced power losses for switching frequencies higher than 12 kHz [20][21][22]. The CAS325M12HM2 [19] MOSFET from CREE is rated at 1.2 kV, 444 A, which is convenient for the application considered here.…”
Section: Power Converter Electrical Modelmentioning
confidence: 99%
“…The efficiency of this topology can be improved, granted the reduction of switching losses through the use of advanced semiconductor power switches such as Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistor (SiC MOSFETs). Recently, SiC powered MOSFETs are being considered as serious candidates in designing power converters for different applications due to their superior material advantages, such as wider bandgap, high thermal conductivity and higher critical breakdown field strength [19,20]. They can provide lower power losses than Si devices and consequently increase the efficiency of power converters at switching frequencies higher than 12 kHz, [21].…”
In this article, an advanced multiphase modular power drive prototype is developed for More Electric Aircraft (MEA). The proposed drive is designed to supply a multi-phase permanent magnet (PM) motor rating 120 kW with 24 slots and 11 pole pairs. The power converter of the drive system is based on Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistor (SiC MOSFET) technology to operate at high voltage, high frequency and low reverse recovery current. Firstly, an experimental characterization test is performed for the selected SiC power module in harsh conditions to evaluate the switching energy losses. Secondly, a finite element thermal analysis based on Ansys-Icepak is accomplished to validate the selected cooling system for the power converter. Thirdly, a co-simulation model is developed using Matlab-Simulink and LTspice ® to evaluate the SiC power module impact on the performance of a multiphase drive system at different operating conditions. The results obtained show that the dynamic performance and efficiency of the power drive are significantly improved, which makes the proposed system an excellent candidate for future aircraft applications.
“…The diversity of both technological development and the regional focus for specific applications has led to commercial and policy drivers resulting in major advances. Examples of this impact include the transformation of the Japanese high speed railway network towards using SiC devices [3], the use of SiC devices in Aerospace and Automotive [4] [5] [6] [7], the explosion of GaN devices in low voltage consumer and lighting applications and the potential for very high efficiency and thermally optimal power electronics in distributed generation systems [8].…”
Increasing electrification means the world will need a projected total of 1000 TW-units per year in the next 10 years+. A new generation of wide bandgap power electronics devices are potentially 100-1000 times faster and 100-1000 lower loss than today's technology. Current market projections of massive growth (30%+) for WBG technology and market size into the 10s of $Billions mean that this is a vitally important technology that will shape the next several decades of the world. A key role of the International Technology Roadmap for Wide bandgap Power Semiconductors (ITRW) is to facilitate an acceleration in the R&D process for this new technology to fulfil its potential. This paper takes a holistic view of the future of wide bandgap power electronics, the challenges that needs to be addressed and how roadmaps can make a contribution to meeting these challenges.
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