2021
DOI: 10.1109/ojpel.2021.3071876
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The Impact of ITRW: How Can WBG Power Semiconductors Break Through?

Abstract: Increasing electrification means the world will need a projected total of 1000 TW-units per year in the next 10 years+. A new generation of wide bandgap power electronics devices are potentially 100-1000 times faster and 100-1000 lower loss than today's technology. Current market projections of massive growth (30%+) for WBG technology and market size into the 10s of $Billions mean that this is a vitally important technology that will shape the next several decades of the world. A key role of the International … Show more

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Cited by 5 publications
(4 citation statements)
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“…The pre-regulation stage can also help in achieving zero-voltage turn-on of the switches that drive the second stage over a wide range of output voltages [2], [10]. Of course, the exploitation of latest wide-bandgap power semiconductors allows to further reduce semiconductor loss [35]. In spite of the presence of an additional stage, some valuable characteristics are highlighted and shown in terms of overall conversion efficiency.…”
Section: ) Approaches Considering Additional Conversion Stagesmentioning
confidence: 99%
“…The pre-regulation stage can also help in achieving zero-voltage turn-on of the switches that drive the second stage over a wide range of output voltages [2], [10]. Of course, the exploitation of latest wide-bandgap power semiconductors allows to further reduce semiconductor loss [35]. In spite of the presence of an additional stage, some valuable characteristics are highlighted and shown in terms of overall conversion efficiency.…”
Section: ) Approaches Considering Additional Conversion Stagesmentioning
confidence: 99%
“…ower density, efficiency and reliability are key design drivers and central concerns for adjustable speed drives in a range of applications including industrial automation and robotics, transportation and renewable energy systems. Wide bandgap (WBG) power semiconductor devices such as silicon carbide (SiC) MOSFETs offer significant potential for improving the power density and efficiency of adjustable speed drives due to their superior material characteristics [1]- [4]. For instance, SiC MOSFETs can operate at higher switching frequencies while maintaining high efficiency due to their fast-switching speed, compared with silicon (Si) IGBTs, which reduces passive filtering components and cooling requirements [5]- [7].…”
Section: Introductionmentioning
confidence: 99%
“…Optimization of converter hardware design is one possibility to improve converter performance by applying wide bandgap semiconductors or new magnetic materials [14]- [16]. Also, topologies could be hybridized to attain the benefits of several converter classes.…”
Section: Introductionmentioning
confidence: 99%