Design and fabrication of Schottky diode, on-chip RF power detector

Jeon, Woochul; Firestone, Todd M.; Rodgers, J.; Melngailis, J.

doi:10.1016/j.sse.2004.05.066

Cited by 25 publications

(29 citation statements)

References 5 publications

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“…This decrease in the barrier height is attributed to the smaller contact area as this parameter is included in Eq. (1), consistent with Jeon et al (2004). The reduction of the Schottky barrier height is also due to the fabrication process, i.e.…”

Section: Current-voltage (I-v) Measurementsupporting

confidence: 79%

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RF–DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems

et al. 2010

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The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device applications without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the AlGaAs/GaAs HEMT Schottky diode is presented. The RF signals are well converted by the fabricated Schottky diodes with cut-off frequency up to 25 GHz estimated in direct injection experiments. The outcomes of these results provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.

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Section: Current-voltage (I-v) Measurementsupporting

confidence: 79%

“…The actual nature of the metalsemiconductor contact is not controllable and in fact may vary substantially from one process to another. This reduced barrier height is beneficial for improved RF response and rectification as it requires a lower turn-on voltage (Jeon et al 2004). …”

Section: Current-voltage (I-v) Measurementmentioning

confidence: 99%

RF–DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems

et al. 2010

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“…Finally, we briefly compare the performance of SBD, pn-junction diode and SOI-QD; Table 2 shows I F , I R and η of SOI-QD at various operation conditions when the input signal amplitude (|V A |) is 100 mV. According to a recent report [3], when V A = 100 mV, the SBD has an I F value of about 1.0 nA and the pn-junction diode has an I F value of about 0.1 pA; this indicates that the SOI-QD has identical I F to the other devices or has larger I F at all conditions for the two L values examined. In addition, since the SOI MOSFET has lower leakage current than the SBD and subthreshold characteristic of well-tempered SOI MOSFET is excellent, a high boost efficiency can be expected when the SOI-QD is used.…”

Section: Remaining Issues Of Conventional Schenkel Circuit and An Advmentioning

confidence: 99%

“…It usually consists of capacitors and pn diodes (PND's) or Schottky-barrier diodes (SBD's). Modern RF applications such as RF-ID chips often use Schottky-barrier diode (SBD) in this circuit [2][3][4]. Unfortunately, generally speaking, the reverse-biased current (I R ) of an SBD is not significantly lower than the forward-biased current (I F ) because the requirement for high drive currents results in a low barrier height.…”

Section: Introductionmentioning

confidence: 99%

Performance Prospects of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips

Ōmura¹,

Iida²

2013

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The feasibility of using the SOI-MOSFET as a quasi-diode to replace the Schottky-barrier diode in the Schenkel circuit is examined by device simulations primarily and experiments partly. Practical expressions of boost-up efficiency for d. c. condition and a. c. condition are proposed and are examined by simulations. It is shown that the SOI-MOSFET-based quasi-diode is a promising device for the Schenkel circuit because high boost-up efficiency can be gained easily. An a. c. analysis indicates that the fully-depleted condition should hold to suppress the floating-body effect for GHz-level RF applications of a quasi-diode.

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“…Schottky diodes due to their high operating frequency, fast switching speed and low forward voltage drop have been widely used in RF power detection circuits, mixers and low-voltage reference circuits [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

A novel model for an integrated rf CMOS schottky diode

Wang

Lee

et al. 2007

2007 7th International Conference on ASIC

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In this paper an interdigital n-type CoSi 2 -Si Schottky diode is fabricated in SMIC 0.18ȝm RF CMOS process. A novel and accurate Schottky diode model has been developed base on the DC and RF measured data. In this novel model the losses due to parasitic capacitance dielectric and metal plate are considered. It is shown that the suggested novel model fits the measurement very well for different voltage biases over the wide frequency range of 0.05GHz to 8.5GHz. A type of four stages charge pump is designed using this new Schottky diode model, the design charge pump can get efficiency of 40%. Key words: RF CMOS; Schottky diode; Modeling; RFID IntroductionWith fast growth of radio frequency (RF) wireless communication technology, the demand for high performance but low cost RF solution is rising. Schottky diodes due to their high operating frequency, fast switching speed and low forward voltage drop have been widely used in RF power detection circuits, mixers and low-voltage reference circuits [1][2][3].When the circuit is operating in the radio frequency range, the simple diode SPICE model is insufficient to describe the integrated Schottky diode characteristics due to the bulk effects introduced by the lossy Si substrate. In order to design SBD (Schottky Barrier Diode) rectifier or detector in a CMOS RF Transceiver chip, accurate and reliable simulation of DC and RF characteristics of the Schottky diode is required. In section 2 of this paper, we design and fabricate an interdigital n-type CoSi 2 -Si Schottky diode and in section 3 and 4 we develop and discuss a new Schottky diode model, when compared with conventional model, the losses due to parasitic capacitance dielectric and metal plate is considered in this novel model. The accuracy of the model has been verified for various voltage biases from 0.05GHz to 8.5GHz.

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Design and fabrication of Schottky diode, on-chip RF power detector

Cited by 25 publications

References 5 publications

RF–DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems

RF–DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystems

Performance Prospects of Fully-Depleted SOI MOSFET-Based Diodes Applied to Schenkel Circuit for RF-ID Chips

A novel model for an integrated rf CMOS schottky diode

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