Design and Fabrication of PTFE-Filled Waveguide Components by SR Direct Etching

Kishihara, Mitsuyoshi; Ikeuchi, Hiroaki; Utsumi, Yuichi; Kawai, Tadashi; Ohta, Isao

doi:10.1587/transele.e95.c.122

Cited by 5 publications

(3 citation statements)

References 11 publications

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“…The transformers utilized in this paper contain the insertion loss of about 2 dB. It was previously examined by measuring the through connection of the two transformers (back-to-back connection), and estimated that the insertion loss was 1.2 -2.0 dB [11], [31]. Therefore, the magnitude −5.0 dB is within acceptable level.…”

Section: Frequency Characteristics Of S-parametersmentioning

confidence: 99%

“…These facts mean that the present PTFE SIW works as a Q-band single mode waveguide. Note that W = 4.00 mm is the same width as the PTFE-filled WG for the Q-band [11], which means that it is straightforward to transform the PTFE-filled WG circuits into the PTFE SIW circuits. It is found from Fig.…”

Section: Propagation Constantmentioning

confidence: 99%

“…In order to measure and evaluate the frequency characteristics of the fabricated 3-dB coupler, the standard waveguide transformers utilized in Refs. [11], [31] are connected. Because the PTFE SIW cannot be connected directly to the standard Q-band waveguide (5.70 mm × 2.85 mm), a connection form through PTFE-filled rectangular WG section is used.…”

Section: Frequency Characteristics Of S-parametersmentioning

confidence: 99%

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Design and Fabrication of PTFE Substrate Integrated Waveguide Coupler by SR Direct Etching

Kishihara

Takeuchi

Yamaguchi

et al. 2021

IEICE Trans. Electron.

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The microfabrication technique based on synchrotron radiation (SR) direct etching process has recently been applied to construct PTFE microstructures. This paper proposes a PTFE substrate integrated waveguide (PTFE SIW). It is expected that the PTFE SIW contributes to the improvement of the structural strength. A rectangular through-hole is introduced taking the advantage of the SR direct etching process. First, a PTFE SIW for the Q-band is designed. Then, a cruciform 3-dB directional coupler consisting of the PTFE SIW is designed and fabricated by the SR direct etching process. The validity of the PTFE SIW coupler is confirmed by measuring the frequency characteristics of the S-parameters. The mechanical strength of the PTFE SIW and the peeling strength of its Au film are also additionally investigated.

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Section: Frequency Characteristics Of S-parametersmentioning

confidence: 99%

Section: Propagation Constantmentioning

confidence: 99%